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    1N486B Price and Stock

    Central Semiconductor Corp 1N486B-TR-TIN-LEAD

    DIODE GEN PURP 250V 200MA DO35
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    DigiKey 1N486B-TR-TIN-LEAD Cut Tape 8,168 1
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    Central Semiconductor Corp 1N486B-BK-TIN-LEAD

    DIODE GEN PURP 250V 200MA DO35
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    DigiKey 1N486B-BK-TIN-LEAD Bulk 2,441 1
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    Rochester Electronics LLC 1N486B

    DIODE GEN PURP 250V 200MA DO35
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    Microchip Technology Inc 1N486B

    DIODE GEN PURP 250V 200MA DO35
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    Onlinecomponents.com 1N486B
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    onsemi 1N486B

    DIODE GEN PURP 250V 200MA DO35
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    1N486B Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N486B Compensated Devices GENERAL PURPOSE SILICON DIODES Original PDF
    1N486B Fairchild Semiconductor Small Signal Diode Original PDF
    1N486B Fairchild Semiconductor General Purpose Low Leakage Diode Original PDF
    1N486B Microsemi High Conductance DO-35 Diodes Original PDF
    1N486B Taitron Components Rectifier Diode, Single, 250V, SOD-27|SOD-68, 2-Pin Original PDF
    1N486B Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    1N486B General Diode Silicon Diode Selection Guide Scan PDF
    1N486B General Semiconductor Low Power Miniature Glass Passivated Junction Rectifier Scan PDF
    1N486B Micronas Semiconductor General Purpose and Switching Diodes in a DO-35 Package Scan PDF
    1N486B Microsemi General Purpose Silicon Diodes Scan PDF
    1N486B Microsemi Data Book 1983 Scan PDF
    1N486B Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N486B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N486B Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N486B Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N486B Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N486B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N486B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N486B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N486B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    1N486B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N482B – 1N486B LOW LEAKAGE RECTIFIER MAXIMUM RATINGS Symbol Value Unit Average forward rectified current @ TA = 25°C Rating IAV 0.65 A Maximum non-repetitive surge 8.3ms ½ sine IFSM 2.0 A Junction temperature range TJ -65 to +200


    Original     		PDF 1N482B 1N486B 1N483B 1N484B 1N485B DO-35 MIL-PRF-19500,

    Low Leakage Diode

    Abstract: 1N486B
    Text: 1N486B General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. General Purpose Low Leakage Diode This product is light sensitive, any damage to the body coating


    Original     		PDF 1N486B DO-35 Low Leakage Diode 1N486B

    1N486B

    Abstract: No abstract text available
    Text: 1N486B 1N486B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 250 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current


    Original     		PDF 1N486B DO-35 1N486B

    Untitled

    Abstract: No abstract text available
    Text: 1N486B 1N486B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 250 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current


    Original     		PDF 1N486B DO-35

    1N486A

    Abstract: 1N486B
    Text: FEATURES 1N486B • • • • • • 1N486B AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS 1N486A MAXIMUM RATINGS AT 25 °C Operating Temperature:


    Original     		PDF 1N486B 1N486B MIL-PRF-19500/118 1N486A 500mW 200mA MILPRF-19500/118 1N486A

    IN483

    Abstract: IN485 IN483B 1N483B 1N485B 1N486B IN485B IN486B
    Text: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N483B 1N485B 1N486B MIL-PRF-19500/118 100mA IN483 IN485 IN483B 1N483B 1N485B 1N486B IN485B IN486B

    1N482B

    Abstract: LL-35 1N4150 1N483B 1N484B 1N485B 1N486B
    Text: High Conductance Use Advantages 1N482B thru 1N4150 1N486B DO-35 Diodes Used as a general purpose diode in power supplies, or in clipping and steering applications. Operation at temperatures up to 200 degrees C, no derating. Can be used in harsh environments where hermeticity and low cost are


    Original     		PDF 1N482B 1N4150 1N486B DO-35 LL-35 1N483B 1N484B 1N485B 1N482B 1N4150 1N483B 1N484B 1N485B 1N486B

    IN5225

    Abstract: 1N486B DO-35 PACKAGE liner marking code
    Text: 1N486B General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. General Purpose Low Leakage Diode This product is light sensitive, any damage to the body coating


    Original     		PDF 1N486B DO-35 IN5225 1N486B DO-35 PACKAGE liner marking code

    IN485B

    Abstract: IN486B IN485 IN483B 1N483B 1N485B 1N486B
    Text: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N483B 1N485B 1N486B MIL-PRF-19500/118 100mA IN485B IN486B IN485 IN483B 1N483B 1N485B 1N486B

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original     		PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    1N485B

    Abstract: 1N486B
    Text: 1N485B 1N486B Central Semiconductor Corp. central Semiconductor Corp. +1 SILICON DIODE JEDEC DO-35 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N485B, 1N486B types are silicon planar diodes designed for low leakage applications.


    OCR Scan     		PDF 1N485B 1N486B DO-35 1N485B, 1N486B 1N485B 10OfiA

    MMBD1502A

    Abstract: 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 1N3070 FOH300A 1N485B 1N486B
    Text: hot a m bSDHBD D03TS07 423 NATL VRRM Irrm Volts Min Device 250 1N486B BAV21 1N3070 1N459 1N459A 1N485B 1N4938 1S923 BAS21 BAV20 FDH400 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1502A MMBD1503A MMBD1504A MMBD1505A 1N3595 1N458A 1N6099 200


    OCR Scan     		PDF 1N486B D0-35 BAV21 DO-35 1N3070 1N459 1N459A MMBD1502A 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 FOH300A 1N485B

    1n4948 Silicon Instrument

    Abstract: byw76 diodes RG3A General instrument 1n4948 byw76
    Text: FAMILIES OF GENERAL INSTRUMENT GLASS PASSIVATED RECTIFIERS Glass Passivated Silicon Diodes 0.2 to 0.4 AMPERES Types: Features: 1N483B thru 1N486B 1N645 thru 1N649 ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Temperature Metallurgically Bonded High Efficiency and Rectification Radio


    OCR Scan     		PDF 1N483B 1N486B 1N645 1N649 MII-STD-202/208 from-65 1N4245 1N4249 1N5059 1N5062 1n4948 Silicon Instrument byw76 diodes RG3A General instrument 1n4948 byw76

    FD333

    Abstract: JAN1N486B FJT1100
    Text: DIODES LOW LEAKAGE DIODES BY DESCENDING BV GLASS PACKAGE By c Vr VOLTS VF @ VOLTS MAX @ 50 @ @ If mA 225 1.1 @ 100 DO-7 250 25 @ 225 1.0 @ 100 DO-7 1N486B 250 50 @ 225 1.0 @ 100 DO-7 1N486B JAN 250 25 @ 225 1.0 100 DO-7 1N486B JAN TX 250 25 @ 225 1.0 @ @


    OCR Scan     		PDF 1N486 1N486A 1N486B 1N459 1N459A 1N485A 1N485B FD333 JAN1N486B FJT1100

    JAN1N486B

    Abstract: JANTX 1N483B JAN-TX1N483B
    Text: POWER SEMICONDUCTOR DIVISION iNstim JAN AND JANTX 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED SILICON DIODES VOLTAGE 70 to 225 Volts CURRENT 200 Milliamperes - - T FEATURES 1.50 38.1 1 .0 0(25.4) Î .300 (7.6) .125(3.18) DIft .085 (2.1G) 1.50


    OCR Scan     		PDF 1N483B 1N486B MIL-S-19500/118C MI-STD-202, JAN1N486B JANTX 1N483B JAN-TX1N483B

    diode 483b

    Abstract: 483B BY100 JAN1N marking E 1n diode
    Text: 1N483B thru 1N486B and 1N5194 thru 1N5196 Microsemi Corp. $ The diode e>perts SANTA ANA, CA j F o r m ore in fo rm a tio n call: / SCOTTSDALE, AZ 7I4 979-8220 GENERAL PURPOSE SILICON DIODES FEA TU R ES • • • • V o id le s s h e rm e tic a lly s e a le d g la s s p a c k a g e (DO-35).


    OCR Scan     		PDF 1N483B 1N486B 1N5194 1N5196 DO-35) 1N5194, 1N5196. 1N486B, 1N5194- diode 483b 483B BY100 JAN1N marking E 1n diode

    n5195

    Abstract: JAN1N486B
    Text: 1N483B thru 1N486B and 1N5194 thru 1N5196 M ierosemi Corp. 1 The óiode experts , 71 SMISTA A N A CA F o r m o re in fo rm a tio n cali: 714 979-8220 GENERAL PURPOSE SILICON DIODES FEATURES • • • • • V oidless h e rm e tic a lly s ea led glass p a c k ag e (DO-35).


    OCR Scan     		PDF 1N483B 1N486B 1N5194 1N5196 DO-35) 1N5196 1N5194, N5195, 1N5196. n5195 JAN1N486B

    Untitled

    Abstract: No abstract text available
    Text: 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED SILICON RECTIFIER Voltage - 70 to 225 Volts Current 200 Milliamperes - FEATURES High temperature metallurgically bonded con­ structed rectifiers 0.2 Ampere oper^ ation at Ta = 25*C with no thermal runaway


    OCR Scan     		PDF 1N483B 1N486B MIL-S-19500

    1N4868

    Abstract: lt 8220 1N483B1 1N4858 1N5194 JAN1N486B N5194 1N483B 1N485B 1N486B
    Text: 1N483B-1N486B 1N51I94-1N5196 «¡erosemi Corp. GENERAL PURPOSE SILICON DIODES FEATURES • • • • Voidless hermetically sealed glass package. Triple layer passivation. Metallurgically bonded. TX types available per MIL-S-19500/118C. ABSOLUTE M A XIM U M RATING S


    OCR Scan     		PDF 1N483B-1N486B 1N51I94-1N5196 MIL-S-19500/118C. 1N483B 80ACKAGE: 1N483B, 1N5194, 1N5195, 1N5196. 1N483B- 1N4868 lt 8220 1N483B1 1N4858 1N5194 JAN1N486B N5194 1N485B 1N486B

    RG3G

    Abstract: D0204AP 1N647 RG3A D0-204AP 1N5559
    Text: QUICK GUIDE TO GLASS PASSIVATED RECTIFIERS TYPE 1N483B thru 1N486B 1N645 thru 1N649 1N4245 thru 1N4249 1N4942* thru 1N4948' 1N5059 thru 1N5062 1N5614 thru 1N5622 CASE D0204MB DO204MB D0204AP D0204AP D0204AP D0204AP le A 02 04 1.0 10 1.0 1.0 1.0 1.0 1.0 I» (A)


    OCR Scan     		PDF 1N483B 1N486B D0204MB 1N485B 1N645 1N646 1N647 1N648 RG3G D0204AP RG3A D0-204AP 1N5559

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N4868

    Abstract: 1N233 zener diode 1N429 1N239 1N471 IN753 IN4858 IN4868 diode JAN1N486B 1N47A
    Text: Zener Volt age Zener Type No. 3t 1ZT @ mA Volts S u f f ix A 0 .2 0 MICROSEMI Zener Voltage Tolerance Max. Zener Impedance @ Ur Ohms Power Rating Device Package 150m w C a s e A 8 1 N 2 2 5 ÎD 1N 2 2 6 il ) 1 N 2 2 7 (1 ) 7 .5 • 1 0 .0 9 .0 • 1 2 .0


    OCR Scan     		PDF 1N2250) 1N226I1) 1N227 150mw 1N228C) 1N229C) 1N2301D 1N231C) 1N2320 1N233 1N4868 1N233 zener diode 1N429 1N239 1N471 IN753 IN4858 IN4868 diode JAN1N486B 1N47A