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    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. C RELEASED FOR PUBLICATION LOC A 1 REVISIONS DIST ALL RIGHTS RESERVED. COPYRIGHT D 2 3 P DESCRIPTION LTR DATE DWN APVD D A - ELASTÔMERO SAE J200, 2BC 414, A14, B14, C12, E014, F17, Z1 Z1=RESISTÊNCIA RASGO, ASTM D624 - 20kg/cm MIN.


    Original     		20kg/cm -20kg/cm PDF

    2553PCB

    Abstract: BUS-61553 2554-PCB BUS-61554 bus-61555 cpu aeroflex resolver rt RTU A08 61556 BUS 61555
    Text: Standard Products CT2553-PCB / 2554-PCB / 2555-PCB / 2556-PCB Advanced Integrated MUX AIM Hybrid for MIL-STD-1553 / SAE-AS15531 in PCB Style July 14, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ CT2553-PCB replaces DDC BUS-61553 CT2554-PCB replaces DDC BUS-61554


    Original     		CT2553-PCB 2554-PCB 2555-PCB 2556-PCB MIL-STD-1553 SAE-AS15531 BUS-61553 CT2554-PCB BUS-61554 2553PCB BUS-61553 BUS-61554 bus-61555 cpu aeroflex resolver rt RTU A08 61556 BUS 61555 PDF

    diode C522

    Abstract: A02N-5
    Text: 123455657 Enhanced LIN Transceiver 89ABCD9E7 1 RxD 1 EN 2 WAKE 3 TxD 4 Rev.2.x and SAE J2602 1 Baud rate up to 20 kBaud 1 Wide operating voltage range VS = 5 to 27 V 1 Very low standby current consumption of 10µA in sleep mode MLX 80020 1 Bus and local wake up capable with source recognition


    Original     		89ABCD9E7 J2602 MLX80020 ISO14001 diode C522 A02N-5 PDF

    BS616LV1625

    Abstract: BS616LV1625TC BS616LV1625TI TSOP1-48
    Text: Preliminary BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1625 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA @55ns operating current I -grade: 115mA (@55ns) operating current


    Original     		BS616LV1625 113mA 115mA x8/x16 BS61e R0201-BS616LV1625 -40oC TSOP1-48 BS616LV1625 BS616LV1625TC BS616LV1625TI PDF

    BS616LV8023

    Abstract: BS616LV8023BC BS616LV8023BI
    Text: BSI Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable „ FEATURES BS616LV8023 „ DESCRIPTION • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current


    Original     		BS616LV8023 100ns x8/x16 BS616LV8023 -40oC 8x10mm) R0201-BS616LV8023 BS616LV8023BC BS616LV8023BI PDF

    TSOP1-48

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1623 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 45mA @55ns operating current I -grade: 46mA (@55ns) operating current


    Original     		BS616LV1623 x8/x16 BS616LV1623 lS616LV1623 -40oC TSOP1-48 12mmx20mm) TSOP1-48 PDF

    TSOP1-48

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1626 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA @55ns operating current I -grade: 115mA (@55ns) operating current


    Original     		BS616LV1626 113mA 115mA x8/x16 BS616LV1626 S616LV1626 -40oC TSOP1-48 PDF

    TSOP1-48

    Abstract: sae a14 BS616LV1626 BS616LV1626TC BS616LV1626TI
    Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1626 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA @55ns operating current I -grade: 115mA (@55ns) operating current


    Original     		BS616LV1626 113mA 115mA x8/x16 BS616LV1626 -40oC TSOP1-48 12mmx20mm) sae a14 BS616LV1626TC BS616LV1626TI PDF

    TSOP1-48

    Abstract: BS616LV1621 BS616LV1621TC BS616LV1621TI
    Text: Preliminary BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable „ FEATURES BS616LV1621 • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin


    Original     		BS616LV1621 x8/x16 113mA 115mA R0201-BS616LV1621 -40oC TSOP1-48 12mmx20mm) BS616LV1621 BS616LV1621TC BS616LV1621TI PDF

    TSOP1-48

    Abstract: BS616LV1623 BS616LV1623TC BS616LV1623TI
    Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1623 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 45mA @55ns operating current I -grade: 46mA (@55ns) operating current


    Original     		BS616LV1623 x8/x16 BS616LV1623 -40oC TSOP1-48 12mmx20mm) TSOP1-48 R0201-BS616LV1623 BS616LV1623TC BS616LV1623TI PDF

    BS616LV8025BC

    Abstract: 100PF BS616LV8025 BS616LV8025BI
    Text: Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable BSI „ FEATURES BS616LV8025 „ DESCRIPTION • Very low operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 45mA Max. operating current I-grade : 50mA (Max.) operating current


    Original     		BS616LV8025 x8/x16 BS616LV8025 R0201-BS616LV8025 100uA. BS616LV8025BC 100PF BS616LV8025BI PDF

    BS616LV4025

    Abstract: BS616LV4025BC BS616LV4025BI BS616LV4025DC BS616LV4025DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BS616LV4025 „ DESCRIPTION „ FEATURES • Operation voltage : 4.5~5.5V • Low power consumption : Vcc = 5.0V C-grade: 45mA Max. operating current I-grade : 50mA (Max.) operating current


    Original     		BS616LV4025 x8/x16 BS616LV4025 R0201-BS616LV4025 BS616LV4025BC BS616LV4025BI BS616LV4025DC BS616LV4025DI PDF

    BGA-48-0608

    Abstract: BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2021 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current


    Original     		BS616LV2021 BS616LV2021 R0201-BS616LV2021 100ns -40oC BGA-48-0608 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI PDF

    TBA 1404

    Abstract: BGA-48-0608 BS616LV2023 BS616LV2023AC BS616LV2023AI BS616LV2023DC BS616LV2023DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2023 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current


    Original     		BS616LV2023 100ns x8/x16 BS616LV2023 R0201-BS616LV2023 -40oC TBA 1404 BGA-48-0608 BS616LV2023AC BS616LV2023AI BS616LV2023DC BS616LV2023DI PDF

    BS616LV4023

    Abstract: BS616LV4023BC BS616LV4023BI BS616LV4023DC BS616LV4023DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BS616LV4023 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current


    Original     		BS616LV4023 100ns x8/x16 BS616LV4023 R0201-BS616LV4023 -40oC 8x10mm) BS616LV4023BC BS616LV4023BI BS616LV4023DC BS616LV4023DI PDF

    BGA-48-0608

    Abstract: BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI
    Text: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616UV2021 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0 ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade: 15mA Max. operating current I-grade: 20mA (Max.) operating current


    Original     		BS616UV2021 120ns 150ns R0201-BS616UV2021 -40oC BGA-48-0608 BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI PDF

    BGA-48-0608

    Abstract: BS616LV4020 BS616LV4020AC BS616LV4020AI BS616LV4020BC BS616LV4020BI BS616LV4020DC BS616LV4020DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BS616LV4020 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current


    Original     		BS616LV4020 100ns x8/x16 BS616LV4020 R0201-BS616LV4020 BGA-48-0608 BS616LV4020AC BS616LV4020AI BS616LV4020BC BS616LV4020BI BS616LV4020DC BS616LV4020DI PDF

    BGA-48-0608

    Abstract: BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616UV2021 „ DESCRIPTION „ FEATURES The BS616UV2021 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide


    Original     		BS616UV2021 BS616UV2021 70/100ns -40oC R0201-BS616UV2021 BGA-48-0608 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI PDF

    BS616UV4020

    Abstract: BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable „ FEATURES • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA Max. operating current I-grade : 20mA (Max.) operating current


    Original     		100ns x8/x16 R0201-BS616UV4020 BS616UV4020 BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI PDF

    BS616LV4021

    Abstract: BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BS616LV4021 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current


    Original     		BS616LV4021 100ns R0201-BS616LV4021 BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI PDF

    Untitled

    Abstract: No abstract text available
    Text: S29GL064S MirrorBit Eclipse Flash S29GL064S 64 Mbit 8 Mbyte CMOS 3.0 Volt Core with Versatile I/O Data Sheet (Preliminary) S29GL064S Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		S29GL064S S29GL064S PDF

    SAE AS33671

    Abstract: MS3367-4-9 MS3367-1-9 MS3367-5-9 MS3367-7-9 AS33671 ms3367-5-0 ms3367 MS3367-4-0 ms3367-2-0
    Text: Welcome To Advanced Cable Ties, Inc. Founded in 1994, Advanced Cable Ties, Inc. ACT is a full-line manufacturer of cable ties and accessories used in industrial/fastener, electronic, electrical, HVAC, and a variety of other specialty applications. Superior Quality


    Original     		ISO-9002 ISO-9001 Mil-S-23190) SAE AS33671 MS3367-4-9 MS3367-1-9 MS3367-5-9 MS3367-7-9 AS33671 ms3367-5-0 ms3367 MS3367-4-0 ms3367-2-0 PDF

    isl 6251 schematic

    Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
    Text: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.


    Original     		Q62702-A772 Q62702-A731 Q62702-A773 OT-23 isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs PDF

    WF512K8-XCXB

    Abstract: WF256K8
    Text: UH ITE M ICRO ELECTRO N ICS 5V FLASH MODULE PRELIMINARY WF256K8, WF512K8-XCX5 * FEATURES • Access Tim es of 60, 70, 90 and 150nS ■ 5 V o lt Programm ing; 5V ±10% Supply ■ 32 pin Ceram ic DIP, JEDEC approved Package 300 ■ Low Power CM OS ■ Organized as 256K x 8 and 512K x 8


    OCR Scan     		WF256K8, WF512K8-XCX5 150nS RetenWF512K8-XCX5 WF512K8-XCXB WF256K8 PDF