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    SIA975DJ Price and Stock

    Vishay Siliconix SIA975DJ-T1-GE3

    MOSFET 2P-CH 12V 4.5A PPAK8X8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA975DJ-T1-GE3 Digi-Reel 46,914 1
    • 1 $1.01
    • 10 $0.629
    • 100 $1.01
    • 1000 $0.28596
    • 10000 $0.28596
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    SIA975DJ-T1-GE3 Cut Tape 46,914 1
    • 1 $1.01
    • 10 $0.629
    • 100 $1.01
    • 1000 $0.28596
    • 10000 $0.28596
    		Buy Now
    SIA975DJ-T1-GE3 Reel 42,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.24748
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    RS SIA975DJ-T1-GE3 Bulk 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.376
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    Vishay Intertechnologies SIA975DJ-T1-GE3

    DUAL P-CHANNEL 12-V (D-S) MOSFET - Tape and Reel (Alt: SIA975DJ-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIA975DJ-T1-GE3 Reel 15,000 6 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.2025
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    SIA975DJ-T1-GE3 Ammo Pack 20 Weeks, 4 Days 1
    • 1 $0.653
    • 10 $0.558
    • 100 $0.412
    • 1000 $0.412
    • 10000 $0.412
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    Mouser Electronics SIA975DJ-T1-GE3 16,944
    • 1 $0.77
    • 10 $0.539
    • 100 $0.408
    • 1000 $0.286
    • 10000 $0.203
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    Newark SIA975DJ-T1-GE3 Cut Tape 1,450 1
    • 1 $0.653
    • 10 $0.558
    • 100 $0.412
    • 1000 $0.412
    • 10000 $0.412
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    SIA975DJ-T1-GE3 Reel 3,000
    • 1 $0.286
    • 10 $0.286
    • 100 $0.286
    • 1000 $0.286
    • 10000 $0.258
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    Quest Components SIA975DJ-T1-GE3 876
    • 1 $0.6
    • 10 $0.6
    • 100 $0.6
    • 1000 $0.24
    • 10000 $0.24
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    TTI SIA975DJ-T1-GE3 Reel 6,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.22
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    TME SIA975DJ-T1-GE3 1
    • 1 $0.547
    • 10 $0.505
    • 100 $0.336
    • 1000 $0.284
    • 10000 $0.273
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    Avnet Asia SIA975DJ-T1-GE3 8 Weeks 3,000
    • 1 -
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    EBV Elektronik SIA975DJ-T1-GE3 7 Weeks 3,000
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    Vishay Intertechnologies SIA975DJ-T1-GE3.

    Mosfet, Dual P Channel, -12V, -4.5A, Powerpak Sc70-6, Full Reel; Channel Type:Dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:12V; Continuous Drain Current Id N Channel:-; No. Of Pins:6Pins Rohs Compliant: No |Vishay SIA975DJ-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SIA975DJ-T1-GE3. Reel 3,000
    • 1 $0.286
    • 10 $0.286
    • 100 $0.286
    • 1000 $0.286
    • 10000 $0.258
    		Buy Now

    Vishay Huntington SIA975DJ-T1-GE3

    Trans MOSFET P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R / MOSFET 2P-CH 12V 4.5A SC-70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIA975DJ-T1-GE3 31,540
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.2193
    • 10000 $0.1901
    		Buy Now

    SIA975DJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA975DJ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 4.5A SC-70-6 Original PDF

    SIA975DJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA975DJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.041 at VGS = - 4.5 V - 4.5a 0.060 at VGS = - 2.5 V - 4.5a 0.110 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA975DJ SC-70 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SIA975DJ

    Abstract: SIA975DJ-T1-GE3 SC-70-6
    Text: New Product SiA975DJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.041 at VGS = - 4.5 V - 4.5a 0.060 at VGS = - 2.5 V - 4.5a 0.110 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA975DJ SC-70 2002/95/EC SC-70-6 18-Jul-08 SIA975DJ-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA975DJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.041 at VGS = - 4.5 V - 4.5a 0.060 at VGS = - 2.5 V - 4.5a 0.110 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA975DJ SC-70 2002/95/EC SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    siA975

    Abstract: SIA975DJ DSA00206566
    Text: SPICE Device Model SiA975DJ Vishay Siliconix Dual P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA975DJ 18-Jul-08 siA975 DSA00206566

    AN609

    Abstract: SiA975DJ
    Text: SiA975DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiA975DJ AN609, 29-Jan-10 AN609

    siA975

    Abstract: No abstract text available
    Text: New Product SiA975DJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.041 at VGS = - 4.5 V - 4.5a 0.060 at VGS = - 2.5 V - 4.5a 0.110 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA975DJ SC-70 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 siA975

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA975DJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.041 at VGS = - 4.5 V - 4.5a 0.060 at VGS = - 2.5 V - 4.5a 0.110 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA975DJ SC-70 2002/95/EC SC-70-6 11-Mar-11

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    SI4497

    Abstract: No abstract text available
    Text: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm


    Original     		PDF SC-75 VMN-PT0197-1006 SI4497