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TC55VCM216ASTN Price and Stock

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Toshiba America Electronic Components TC55VCM216ASTN55LA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	TC55VCM216ASTN55LA		1,293			1 $20.898 10 $20.898 100 $20.898 1000 $15.6735 10000 $15.6735	Buy Now
Toshiba America Electronic Components TC55VCM216ASTN55 IC,SRAM,256KX16,CMOS,TSSOP,48PIN,PLASTIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	TC55VCM216ASTN55		191			1 $12 10 $12 100 $7.2 1000 $6.9 10000 $6.9	Buy Now
	TC55VCM216ASTN55		2			1 $24.63 10 $24.63 100 $24.63 1000 $24.63 10000 $24.63	Buy Now

TC55VCM216ASTN Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TC55VCM216ASTN		Toshiba	SRAM - Low Power		Original	PDF
TC55VCM216ASTN40		Toshiba	262,144 Word By 16 Bit Full CMOS Static RAM		Original	PDF
TC55VCM216ASTN40		Toshiba	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS		Original	PDF
TC55VCM216ASTN55		Toshiba	262,144 Word By 16 Bit Full CMOS Static RAM		Original	PDF
TC55VCM216ASTN55		Toshiba	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS		Original	PDF

TC55VCM216ASTN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TC55VCM216ASTN Abstract: TC55VCM216ASTN40 Text: TC55VCM216ASTN40,55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM216ASTN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to	Original	TC55VCM216ASTN40 144-WORD 16-BIT TC55VCM216ASTN 304-bit	PDF
TSOP48-P-1214-0 Abstract: TC55VCM216ASTN TC55VCM216ASTN40 Text: TC55VCM216ASTN40,55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM216ASTN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to	Original	TC55VCM216ASTN40 144-WORD 16-BIT TC55VCM216ASTN 304-bit TSOP48-P-1214-0	PDF
TC55VCM216ASTN Abstract: TC55VCM216ASTN40 Text: TC55VCM216ASTN40,55 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM216ASTN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to	Original	TC55VCM216ASTN40 144-WORD 16-BIT TC55VCM216ASTN 304-bit	PDF
TC554161A Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000	PDF
TC55VEM416AXBN Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN	PDF
tsop-56 samsung Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga Text: TOSHIBA FLASH Network FCRAM NOR Flash SRAM Memory Selection Guide PSRAM NAND Flash Multi-Chip Packages Memory Cards September 2004 Toshiba America Electronic Components TOSHIBA Toshiba offers one of the widest varieties of memory products of any semiconductor manufacturer. Based on the three core memory technologies:	Original	576Mb 256Mb tsop-56 samsung TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga	PDF
th50vpf Abstract: TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00 Text: MOS Memories Dynamic RAMs Static RAMs NOR Flash Memories NAND E2PROM Media Card MCPs multi-chip packages z 2 z 3 z 10 z 11 z 12 z 13 1 Dynamic RAMs Fast Cycle RAM (FCRAMTM ) (DDR) Capacity 256 Mbits 288 Mbits Product No. TC59LM806CFT-50 TC59LM806CFT-55	Original	TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 64M/32M th50vpf TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00	PDF
TH58NVG2S3 Abstract: TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58VG02 AFT-70L Text: 2004-2 PRODUCT GUIDE MOS Memory semiconductor 2004 http://www.semicon.toshiba.co.jp/eng 1. Selection Guide DRAM Dynamic RAMs Network FCRAMTM (DDR FCRAM) 200 MHz (400 Mbps) 182 MHz (364 Mbps) 167 MHz (334 Mbps) 32M x 8 TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60	Original	TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 TC59LM836DMB-30 TH58NVG2S3 TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58VG02 AFT-70L	PDF