L30ESDL5V0C3-2
Abstract: Diode LT n5 LT n5 ltn5 340W L30ESDL5
Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small
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L30ESDL5V0C3-2
L30ESDL5V0C3-2
O236AB)
Diode LT n5
LT n5
ltn5
340W
L30ESDL5
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ltn5
Abstract: L30ESDL5V0 Diode LT n5 LT n5
Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small
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L30ESDL5V0C3-2
L30ESDL5V0C3-2
O236AB)
ltn5
L30ESDL5V0
Diode LT n5
LT n5
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ltn5
Abstract: Diode LT n5 L30ESDL5V0
Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small
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L30ESDL5V0C3-2
L30ESDL5V0C3-2
O236AB)
ltn5
Diode LT n5
L30ESDL5V0
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4T SOT 23
Abstract: MMBD301 SOT23 JEDEC standard orientation
Text: DISCRETE POWER AND SIGNAL TECHNOLOGIES MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4T SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted
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MMBD301
OT-23
O-236AB
O236AB
4T SOT 23
MMBD301
SOT23 JEDEC standard orientation
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Untitled
Abstract: No abstract text available
Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small
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L30ESDL5V0C3-2
L30ESDL5V0C3-2
O236AB)
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to236ab
Abstract: MMBD301
Text: MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4TF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature
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MMBD301
OT-23
O-236AB
O236AB
to236ab
MMBD301
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Diode LT n5
Abstract: GSOT-23 L30ESDL5V0C3-2 12-Peakpulse
Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small
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L30ESDL5V0C3-2
L30ESDL5V0C3-2
O236AB)
Diode LT n5
GSOT-23
12-Peakpulse
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L30ESDL5V0C3-2
Abstract: Diode LT n5 L30ESD
Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE- 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small
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L30ESDL5V0C3-2
L30ESDL5V0C3-2
O236AB)
Diode LT n5
L30ESD
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L30ESDL5V0C3-2
Abstract: 3-40W
Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small
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L30ESDL5V0C3-2
L30ESDL5V0C3-2
O236AB)
3-40W
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MMBD701
Abstract: No abstract text available
Text: MMBD701 CONNECTION DIAGRAM 3 3 PACKAGE 5HF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GE Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature
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MMBD701
OT-23
O-236AB
O236AB
MMBD701
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MMBD701
Abstract: D0 sot23 A0 SOT23 FS PKG CODE 49
Text: MMBD701 CONNECTION DIAGRAM 3 3 PACKAGE 5HF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GE Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature
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MMBD701
OT-23
O-236AB
O236AB
MMBD701
D0 sot23
A0 SOT23
FS PKG CODE 49
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SOT23 JEDEC standard orientation
Abstract: SOT-23 4TF MMBD301
Text: MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4TF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature
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MMBD301
OT-23
O-236AB
O236AB
SOT23 JEDEC standard orientation
SOT-23 4TF
MMBD301
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Untitled
Abstract: No abstract text available
Text: PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,
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PMEG2005CT
O-236AB)
AEC-Q101
771-PMEG2005CT215
PMEG2005CT
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SMD TRANSISTOR MARKING w7
Abstract: No abstract text available
Text: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9115T
O-236AB)
PBHV8115T.
AEC-Q101
PBHV9115T
771-PBHV9115T215
SMD TRANSISTOR MARKING w7
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sot023
Abstract: No abstract text available
Text: PESD5V0S2BT Low capacitance bidirectional double ESD protection diode Rev. 03 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional double ElectroStatic Discharge ESD protection diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to
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O-236AB)
771-PESD5V0S2BT-T/R
sot023
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pesd1can4
Abstract: BV SMD SOT-023 PESD1CAN.215 PESD1CAN
Text: PESD1CAN CAN bus ESD protection diode Rev. 04 — 15 February 2008 Product data sheet 1. Product profile 1.1 General description PESD1CAN in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller Area Network (CAN) bus lines
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O-236AB)
771-PESD1CAN-T/R
pesd1can4
BV SMD
SOT-023
PESD1CAN.215
PESD1CAN
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sot23 marking V2p
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification Supersedes data of September 1995 1998 Aug 27 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION
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M3D088
BFQ67
BFQ67
MSB003
R77/04/pp12
771-BFQ67-T/R
sot23 marking V2p
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Untitled
Abstract: No abstract text available
Text: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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2N7002CK
O-236AB)
2N7002CK
771-2N7002CK215
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BSR14 SOT23
Abstract: bsr14 bsr13 BSR14,215
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA
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BSR13;
BSR14
BSR15
BSR16.
BSR13
BSR14
BSR14 SOT23
BSR14,215
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AD1580
Abstract: AD1580A AD1580B AD1580BRT AD7714-3 OP193 AD1580-B OP2283
Text: 1.2 V Micropower, Precision Shunt Voltage Reference AD1580 PIN CONFIGURATIONS FEATURES AD1580 V+ 1 3 NC OR V– 3 NC (OR V–) V+ 2 TOP VIEW NC = NO CONNECT 00700-002 V– 2 TOP VIEW NC = NO CONNECT Figure 1. SOT-23 Figure 2. SC70 50 45 40 APPLICATIONS 35
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AD1580
OT-23
12-bit
OT-23
AD1580.
D00700-0-1/08
AD1580
AD1580A
AD1580B
AD1580BRT
AD7714-3
OP193
AD1580-B
OP2283
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ZENER R2k
Abstract: ZENER R2M AD7714-3 AD7943 ADR1581 OP193 ADR1581ARTZ
Text: 1.25 V Micropower, Precision Shunt Voltage Reference ADR1581 PIN CONFIGURATION FEATURES Wide operating range: 60 A to 10 mA Initial accuracy: ±0.12% maximum Temperature drift: ±50 ppm/°C maximum Output impedance: 0.5 Ω maximum Wideband noise 10 Hz to 10 kHz : 20 μV rms
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ADR1581
OT-23
OT-23
ADR1581
ADR1581ARTZ-REEL7
ADR1581ARTZ-R21
ADR1581BRTZ-REEL71
ADR1581BRTZ-R21
ZENER R2k
ZENER R2M
AD7714-3
AD7943
OP193
ADR1581ARTZ
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PMBT6428
Abstract: PMBT6429 Philips MARKING CODE 1k
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBT6428; PMBT6429 NPN general purpose transistors Product specification Supersedes data of 1999 Apr 27 2004 Jan 22 Philips Semiconductors Product specification NPN general purpose transistors PMBT6428; PMBT6429 FEATURES
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PMBT6428;
PMBT6429
PMBT6428
MAM255
SCA76
R75/04/pp7
PMBT6428
PMBT6429
Philips MARKING CODE 1k
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2N7002KA
Abstract: No abstract text available
Text: 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible
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2N7002KA
2N7002KA
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MMBF5486LT1
Abstract: 318C8 marking gfg 6f
Text: MOTOROLA Order this document by MMBF5486LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE MMBF5486LT1 M o to ro la P re fe rre d D e vic e MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol
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OCR Scan
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MMBF5486LT1/D
MMBF5486LT1
OT-23
O-236AB)
MMBF5486LT1
318C8
marking gfg 6f
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