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    UGF2016F Search Results

    UGF2016F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UGF2016F Cree FET Transistor, 16W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

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    cree rf

    Abstract: UGF2016 UGF2016F cree MOS F1840
    Text: UGF2016 16W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 16W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		UGF2016 30dBc UGF2016 cree rf UGF2016F cree MOS F1840 PDF

    Untitled

    Abstract: No abstract text available
    Text: UGF2016 16W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 16W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		UGF2016 30dBc UGF2016F UGF2016 150mA, UGF2016F PDF