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    ULTRALAM 2000 Search Results

    ULTRALAM 2000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-058BNCX200-003 Amphenol Cables on Demand Amphenol CO-058BNCX200-003 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 3ft Datasheet
    CO-058BNCX200-050 Amphenol Cables on Demand Amphenol CO-058BNCX200-050 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 50ft Datasheet
    CO-058SMAX200-002 Amphenol Cables on Demand Amphenol CO-058SMAX200-002 SMA Male to SMA Male (RG58) 50 Ohm Coaxial Cable Assembly 2ft Datasheet
    CO-059BNCX200-000.6 Amphenol Cables on Demand Amphenol CO-059BNCX200-000.6 BNC Male to BNC Male (RG59) 75 Ohm Coaxial Cable Assembly (RG59/U Solid) 0.5ft Datasheet
    CO-059BNCX200-015 Amphenol Cables on Demand Amphenol CO-059BNCX200-015 BNC Male to BNC Male (RG59) 75 Ohm Coaxial Cable Assembly (RG59/U Solid) 15ft Datasheet

    ULTRALAM 2000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RO4403

    Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
    Text: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the


    Original     		PDF 6010LM, RO3003 RO3035 RO3203 RO3006 RO3206 RO3010 RO3210 RO4003C RO4350B RO4403 Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 rogers laminate materials RO4450B RO3210

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1015N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1015NR1 MMRF1015GNR1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and


    Original     		PDF MMRF1015N MMRF1015NR1 MMRF1015GNR1 MMRF1015NR1

    15650ETPBGA

    Abstract: 81-ball MIL-STD-1553 terminals
    Text: Multi-Protocol PBGA Mil- Std- Data Bus Interface Model # NHi-156XXPBGA The NHi PBGA family of Mil-Std-1553 terminals address the requirements for small, cost effective, reliable terminals suitable for critical military applications. NHi has solved the critical problem of


    Original     		PDF NHi-156XXPBGA Mil-Std-1553 0607PBGA-2 15650ETPBGA 81-ball MIL-STD-1553 terminals

    MBL105

    Abstract: mbl10 top 8901
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF900-110; BLF900S-110 Base station LDMOS transistors Preliminary specification 2003 Sep 22 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF900-110; BLF900S-110 FEATURES APPLICATIONS


    Original     		PDF M3D379 M3D461 BLF900-110; BLF900S-110 SCA75 613524/03/pp14 MBL105 mbl10 top 8901

    Untitled

    Abstract: No abstract text available
    Text: Multi-Protocol PBGA Mil- Std- Data Bus Interface Model # NHi-156XXPBGA The NHi PBGA family of Mil-Std-1553 terminals address the requirements for small, cost effective, reliable terminals suitable for critical military applications. NHi has solved the critical problem of


    Original     		PDF NHi-156XXPBGA Mil-Std-1553 0607PBGA-2

    ultralam 2000

    Abstract: Single Line TVS Diode 400W SMA
    Text: AP603 High Dynamic Range 7W 28V HBT Amplifier Applications •  Mobile Infrastructure High Power Amplifier HPA 5x6 mm power DFN package Product Features  800 – 2200 MHz  +38 dBm P1dB  -50 dBc ACLR @ 1W PAVG  -51 dBc IMD3 @ 1W PEP  15% Efficiency @ 1W PAVG


    Original     		PDF AP603 AP603 ultralam 2000 Single Line TVS Diode 400W SMA

    mle350

    Abstract: 6 pin TRANSISTOR SMD CODE XI BLF900-110 BLF900S-110 philips ceramic capacitors smd smd capacitor philips 0805 ultralam 2000 top 8901 MBL10
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF900-110; BLF900S-110 Base station LDMOS transistors Product specification Supersedes data of 2003 Sep 22 2004 Feb 04 Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110


    Original     		PDF M3D379 M3D461 BLF900-110; BLF900S-110 SCA76 R77/02/pp13 mle350 6 pin TRANSISTOR SMD CODE XI BLF900-110 BLF900S-110 philips ceramic capacitors smd smd capacitor philips 0805 ultralam 2000 top 8901 MBL10

    FERRITE BEAD 1000 OHM 0805

    Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010N MW6S010NR1 MW6S010GNR1 FERRITE BEAD 1000 OHM 0805 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100

    Untitled

    Abstract: No abstract text available
    Text: AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Applications • • • • • Small Cells / Repeaters / DAS 3G / 4G Wireless Infrastructure Wireless Backhaul Portable Radios LTE / WCDMA / CDMA 14 Pin 5x6 mm DFN Package Product Features • • • • • •


    Original     		PDF AP561-F 28dBm AP561

    AP562-F

    Abstract: No abstract text available
    Text: AP562 3.3-3.8 GHz WiMAX 8W Power Amplifier Product Features Product Description • 3.3 – 3.8 GHz Functional Diagram The AP562 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage amplifier has 12 dB gain, while being able to achieve high


    Original     		PDF AP562 AP562 AP562-F" 1-800-WJ1-4401 AP562-F

    MHVIC910HR2

    Abstract: MW6S010NR1 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010N MW6S010NR1 MW6S010GNR1 MHVIC910HR2 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955

    AP561-F

    Abstract: No abstract text available
    Text: AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Applications •     Small Cells / Repeaters / DAS 3G / 4G Wireless Infrastructure Wireless Backhaul Portable Radios LTE / WCDMA / CDMA 14 Pin 5x6 mm DFN Package Product Features      


    Original     		PDF AP561-F 28dBm AP561-F

    AP562-F

    Abstract: AP562-PCB3500 AP601
    Text: AP562 3.3-3.8 GHz WiMAX 8W Power Amplifier Product Features Product Description Functional Diagram The AP562 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage amplifier has 12 dB gain, while being able to achieve high


    Original     		PDF AP562 AP562 AP562-F" 1-800-WJ1-4401 AP562-F AP562-PCB3500 AP601

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW6S010 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1


    Original     		PDF MW6S010 MW6S010NR1/GNR1. MW6S010MR1 MW6S010GMR1 MW6S010MR1

    FERRITE BEAD 1000 OHM 0805

    Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 2, 5/2006 Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1


    Original     		PDF MW6S010 MW6S010NR1/GNR1. MW6S010MR1 MW6S010GMR1 MW6S010MR1 FERRITE BEAD 1000 OHM 0805 MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1

    SD2933

    Abstract: 200B 700B M177
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2933 SD2933 200B 700B M177

    sc1430

    Abstract: 100870
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2933 SD2933 sc1430 100870

    Untitled

    Abstract: No abstract text available
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2933 SD2933

    resistor 560 ohm

    Abstract: sc1430 SD2933 200B 700B M177
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2933 SD2933 resistor 560 ohm sc1430 200B 700B M177

    sc1430

    Abstract: 2896 80c
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2933 SD2933 sc1430 2896 80c

    resistor 560 ohm

    Abstract: SD2933 sc1430 200B 700B M177
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2933 SD2933 resistor 560 ohm sc1430 200B 700B M177

    MW6S010NR1

    Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1

    resistor 560 ohm

    Abstract: SD2933 2896 80c sc1430
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2933 SD2933 resistor 560 ohm 2896 80c sc1430

    SD2933

    Abstract: 2896 80c resistor 560 ohm M177
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2933 SD2933 2896 80c resistor 560 ohm M177