TF WIRE
Abstract: vmm 90-09f ZY180L ZY180R
Text: Advanced Technical Information VMM 90-09F VDSS Dual Power HiPerFETTM Module ID25 RDS on = 900 V = 85 A = 76 mW Phaseleg Configuration Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 900 V ±20 V ID25 ID80 TC = 25°C TC = 80°C
|
Original
|
PDF
|
90-09F
UL758,
ZY180L
350mm
ZY180R
TF WIRE
vmm 90-09f
|
d1191
Abstract: 400-12E4 ic equivalent MID 400 MII400-12E4 ZY180L 0002K MJ50150
Text: MII 400-12E4 IC25 = 420 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Module phaseleg and chopper topolgies with optional temperature sensor MII 400-12E4 MID 400-12E4 MID 400-12E4T 3 T1 11 D2 2 10 1 T2 T2 11 3 T1 D1 1 9 MDI 400-12E4 3 D1 8 MID 400-12E4(T) MDI 400-12E4
|
Original
|
PDF
|
400-12E4
400-12E4T
400-12E4
MII400-12E4
d1191
ic equivalent MID 400
MII400-12E4
ZY180L
0002K
MJ50150
|
ZY180L
Abstract: 1600 v mosfet
Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode Preliminary data D S G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C
|
Original
|
PDF
|
1600-02P
14Source
20090924a
ZY180L
1600 v mosfet
|
DIN970
Abstract: 1500-0075X2 ZY180L ZY180R
Text: VMM 1500-0075X2 Dual Power MOSFET Module VDSS = 75 V ID25 = 1450 A RDS on = 0.38 mΩ Phaseleg Configuration 8 9 2 3 11 10 9 8 1 11 10 2 Features MOSFET T1 + T2 Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C VGS 75 V ± 20 V TC = 25°C TC = 80°C j
|
Original
|
PDF
|
1500-0075X2
DIN970
1500-0075X2
ZY180L
ZY180R
|
VMO 580-02F
Abstract: zy180l
Text: Advanced Technical Information MegaMOSTMFET Module VMO 580-02F VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25
|
Original
|
PDF
|
580-02F
UL758,
ZY180L
350mm
ZY180R
D-68623
VMO 580-02F
|
UL758
Abstract: No abstract text available
Text: VMM 650-01F VDSS Dual Power HiPerFETTM Module ID25 RDS on = 100 V = 680 A Ω = 1.8 mΩ Phaseleg Configuration Preliminary Data Features MOSFET T1 + T2 Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 100 V ±20 V ID25 ID80 TC = 25°C TC = 80°C
|
Original
|
PDF
|
650-01F
UL758,
ZY180L
350mm
ZY180R
D-68623
UL758
|
Untitled
Abstract: No abstract text available
Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mΩ max. N-Channel Enhancement Mode D S G KS D KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C 1900
|
Original
|
PDF
|
1600-02P
20100302b
|
MII400-12E4
Abstract: MDI400-12E4 MID400-12E4
Text: MII400-12E4 IGBT Module Preliminary Data phaseleg and chopper topolgies with optional temperature sensor MII 400-12E4 MID 400-12E4 T 3 T1 3 T1 D1 8 D11 2 8 1 9 T2 1 T2 D2 3 11 10 9 8 1 1 9 D12 D2 11 11 2 10 2 2 10 6 7 t NTC for .T version only Features
|
Original
|
PDF
|
MII400-12E4
400-12E4
400-12E4
ZY180R
350mm
UL758,
ZY180L
20090812c
MII400-12E4
MDI400-12E4
MID400-12E4
|
ZY180L
Abstract: ZY180R 90-09F
Text: VMM 90-09F VDSS = 900 V ID25 = 85 A Ω RDS on = 76 mΩ Dual Power HiPerFETTM Module Phaseleg Configuration 3 8 9 1 11 10 2 6 7 NTC Features MOSFET T1 + T2 Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 900 V ±20 V ID25 ID80 TC = 25°C
|
Original
|
PDF
|
90-09F
ZY180L
ZY180R
90-09F
|
VMO1200-01F
Abstract: ZY180L MJ10006 VMO1200
Text: VMO 1200-01F PolarHT Module VDSS = 100 V ID25 = 1220 A RDS on = 1.25 mΩ max. N-Channel Enhancement Mode D S D G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C VGS Maximum Ratings 75 ± 20 V V ID25 ID80 TC = 25°C TC = 80°C 1220
|
Original
|
PDF
|
1200-01F
20100614b
VMO1200-01F
ZY180L
MJ10006
VMO1200
|
ZY180L
Abstract: zy180r 600V 300A igbt dc to dc power supply ic equivalent MID 400 thermal simulation of IC package MII400-12E4
Text: MII 400-12E4 MID 400-12E4 MDI 400-12E4 IGBT Module phaseleg and chopper topolgies 3 T1 3 1 9 D2 11 2 10 1 T2 T2 8 D11 9 1 D12 11 D2 2 10 MII 3 T1 D1 D1 8 IC25 = 420 A = 1200 V VCES VCE sat typ. = 2.2 V 2 MID MDI Features IGBTs T1-T2 • NPT3 IGBT Symbol Conditions
|
Original
|
PDF
|
400-12E4
MII400-12E4
ZY180L
zy180r
600V 300A igbt dc to dc power supply
ic equivalent MID 400
thermal simulation of IC package
MII400-12E4
|
1500-0075X2
Abstract: No abstract text available
Text: VMM 1500-0075X2 Dual Power MOSFET Module VDSS = 75 V ID25 = 1560 A RDS on = 0.38 mΩ Phaseleg Configuration 8 9 11 VDSS TVJ = 25°C to 150°C Maximum Ratings 75 V ± 20 V u VGS TC = 25°C TC = 80°C j j 1560 1240 A A IF25 IF80 TC = 25°C (diode) j TC = 80°C (diode) j
|
Original
|
PDF
|
1500-0075X2
20100629a
1500-0075X2
|
Untitled
Abstract: No abstract text available
Text: VMM 650-01F Dual Power HiPerFETTM Module VDSS = 100 V ID25 = 680 A Ω RDS on = 1.8 mΩ Phaseleg Configuration Preliminary Data Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ¬ ¬ ¬ ¬ ID25 ID80 TC = 25°C TC = 80°C
|
Original
|
PDF
|
650-01F
UL758,
ZY180L
350mm
ZY180R
|
MDI400-12E4
Abstract: ZY180L MID400-12E4 MII400-12E4
Text: MII400-12E4 IGBT Module Preliminary Data phaseleg and chopper topolgies with optional temperature sensor MII 400-12E4 MID 400-12E4 T 3 T1 3 T1 D1 8 D11 2 8 1 9 T2 1 T2 D2 10 2 1 9 D2 2 2 6 7 Features IGBTs T1 - T2 Conditions VCES TVJ = 25°C to 125°C Maximum Ratings
|
Original
|
PDF
|
MII400-12E4
400-12E4
400-12E4
ZY180L
350mm
ZY180R
20090812c
MDI400-12E4
MID400-12E4
MII400-12E4
|
|
|
ZY180R
Abstract: UL758 ZY180L C 12 PH diode 1000-01P
Text: VMM 1000-01P VDSS = 100 V ID25 = 1000 A Ω RDS on = 0.75 mΩ Dual Trench MOSFET Module Phaseleg Configuration Preliminary data 3 8 9 1 11 10 2 Features MOSFET T1 + T2 Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C ① ① IF25 IF80 (diode) TC = 25°C
|
Original
|
PDF
|
1000-01P
ZY180L
350mm
ZY180R
UL758,
UL758
C 12 PH diode
1000-01P
|
ZY18
Abstract: ZY180L ZY180R
Text: MII 400-12E4 MID 400-12E4 MDI 400-12E4 IGBT Module phaseleg and chopper topolgies IC25 = 420 A = 1200 V VCES VCE sat typ. = 2.2 V Preliminary 3 T1 3 D1 D1 8 1 9 D2 11 2 10 1 T2 T2 8 D11 9 1 D12 11 D2 2 10 MII 3 T1 2 MID MDI Features IGBTs T1-T2 • IGBT Symbol
|
Original
|
PDF
|
400-12E4
ZY180L
350mm
ZY180R
ZY18
|
ZY180L
Abstract: ZY180R
Text: MII 300-12 E4 IGBT Module phaseleg IC25 = 280 A VCES = 1200 V VCE sat typ. = 2.2 V Preliminary data 3 T1 D1 8 1 9 T2 D2 11 2 10 Features IGBTs T1 - T2 Maximum Ratings VCES TVJ = 25°C to 125°C 1200 V ± 20 V 280 200 A A TC = 25°C TC = 80°C ICM VCEK VGE = ±15 V; RG = 7.5 Ω; TVJ = 125°C
|
Original
|
PDF
|
UL758,
ZY180L
350mm
ZY180R
|
Untitled
Abstract: No abstract text available
Text: Advanced Technical Information MII 400-12E4 IGBT Module Phase-leg topolgy IC25 = 420 A = 1200 V VCES VCE sat typ. = 2.2 V 3 8 9 1 11 10 2 Features IGBTs • IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES 1200 V ± 20 V IC25 IC80 TC = 25°C
|
Original
|
PDF
|
400-12E4
UL758,
ZY180L
350mm
ZY180R
|
TF WIRE
Abstract: vmm 90-09f
Text: VMM 90-09F Advanced Technical Information VDSS = 900 V ID25 = 85 A Ω RDS on = 76 mΩ Dual Power HiPerFETTM Module Phaseleg Configuration 3 8 9 1 11 10 2 6 7 NTC Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 900 V ±20
|
Original
|
PDF
|
90-09F
UL758,
ZY180L
350mm
ZY180R
TF WIRE
vmm 90-09f
|
ZY180L
Abstract: VMO 1600-02P 1600-02P
Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode D S G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C 1900 1600
|
Original
|
PDF
|
1600-02P
14Source
20100302b
ZY180L
VMO 1600-02P
1600-02P
|
Untitled
Abstract: No abstract text available
Text: Advanced Technical Information VMM 90-09F VDSS Dual Power HiPerFETTM Module ID25 RDS on = 900 V = 85 A Ω = 76 mΩ Phaseleg Configuration Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 900 V ±20 V ID25 ID80 TC = 25°C
|
Original
|
PDF
|
90-09F
UL758,
ZY180L
350mm
ZY180R
|
Untitled
Abstract: No abstract text available
Text: Advanced Technical Information MegaMOSTMFET Module VMO 580-02F VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25 ID80 TC = 25°C
|
Original
|
PDF
|
580-02F
UL758,
ZY180L
350mm
ZY180R
|
ZY180L
Abstract: VMO 1600-02P
Text: VMO 1600-02P Advanced Technical Information PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.65 mW N-Channel Enhancement Mode D S G KS D KS G S Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C
|
Original
|
PDF
|
1600-02P
UL758,
ZY180L
VMO 1600-02P
|
ZY180R
Abstract: No abstract text available
Text: Optional accessories for Thyristor/Diode Modules For module-types MCC 19, 26, 44, 56, 60, 72, 94 and 95 version 1 : Keyed Gate Cathode twin plugs with wire length = 350 mm; gate = yellow, cathode = red Type ZY 200 L L = Left for pin pair 4/5 Type ZY 200 R (R = Right for pin pair 6/7)
|
OCR Scan
|
PDF
|
60-Hz-value
ZY180R
|
