TF WIRE
Abstract: vmm 90-09f ZY180L ZY180R
Text: Advanced Technical Information VMM 90-09F VDSS Dual Power HiPerFETTM Module ID25 RDS on = 900 V = 85 A = 76 mW Phaseleg Configuration Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 900 V ±20 V ID25 ID80 TC = 25°C TC = 80°C
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90-09F
UL758,
ZY180L
350mm
ZY180R
TF WIRE
vmm 90-09f
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d1191
Abstract: 400-12E4 ic equivalent MID 400 MII400-12E4 ZY180L 0002K MJ50150
Text: MII 400-12E4 IC25 = 420 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Module phaseleg and chopper topolgies with optional temperature sensor MII 400-12E4 MID 400-12E4 MID 400-12E4T 3 T1 11 D2 2 10 1 T2 T2 11 3 T1 D1 1 9 MDI 400-12E4 3 D1 8 MID 400-12E4(T) MDI 400-12E4
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400-12E4
400-12E4T
400-12E4
MII400-12E4
d1191
ic equivalent MID 400
MII400-12E4
ZY180L
0002K
MJ50150
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DIN970
Abstract: 1500-0075X2 ZY180L ZY180R
Text: VMM 1500-0075X2 Dual Power MOSFET Module VDSS = 75 V ID25 = 1450 A RDS on = 0.38 mΩ Phaseleg Configuration 8 9 2 3 11 10 9 8 1 11 10 2 Features MOSFET T1 + T2 Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C VGS 75 V ± 20 V TC = 25°C TC = 80°C j
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1500-0075X2
DIN970
1500-0075X2
ZY180L
ZY180R
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VMO 580-02F
Abstract: zy180l
Text: Advanced Technical Information MegaMOSTMFET Module VMO 580-02F VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25
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580-02F
UL758,
ZY180L
350mm
ZY180R
D-68623
VMO 580-02F
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UL758
Abstract: No abstract text available
Text: VMM 650-01F VDSS Dual Power HiPerFETTM Module ID25 RDS on = 100 V = 680 A Ω = 1.8 mΩ Phaseleg Configuration Preliminary Data Features MOSFET T1 + T2 Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 100 V ±20 V ID25 ID80 TC = 25°C TC = 80°C
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650-01F
UL758,
ZY180L
350mm
ZY180R
D-68623
UL758
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MII400-12E4
Abstract: MDI400-12E4 MID400-12E4
Text: MII400-12E4 IGBT Module Preliminary Data phaseleg and chopper topolgies with optional temperature sensor MII 400-12E4 MID 400-12E4 T 3 T1 3 T1 D1 8 D11 2 8 1 9 T2 1 T2 D2 3 11 10 9 8 1 1 9 D12 D2 11 11 2 10 2 2 10 6 7 t NTC for .T version only Features
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MII400-12E4
400-12E4
400-12E4
ZY180R
350mm
UL758,
ZY180L
20090812c
MII400-12E4
MDI400-12E4
MID400-12E4
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ZY180L
Abstract: ZY180R 90-09F
Text: VMM 90-09F VDSS = 900 V ID25 = 85 A Ω RDS on = 76 mΩ Dual Power HiPerFETTM Module Phaseleg Configuration 3 8 9 1 11 10 2 6 7 NTC Features MOSFET T1 + T2 Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 900 V ±20 V ID25 ID80 TC = 25°C
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90-09F
ZY180L
ZY180R
90-09F
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ZY180L
Abstract: zy180r 600V 300A igbt dc to dc power supply ic equivalent MID 400 thermal simulation of IC package MII400-12E4
Text: MII 400-12E4 MID 400-12E4 MDI 400-12E4 IGBT Module phaseleg and chopper topolgies 3 T1 3 1 9 D2 11 2 10 1 T2 T2 8 D11 9 1 D12 11 D2 2 10 MII 3 T1 D1 D1 8 IC25 = 420 A = 1200 V VCES VCE sat typ. = 2.2 V 2 MID MDI Features IGBTs T1-T2 • NPT3 IGBT Symbol Conditions
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400-12E4
MII400-12E4
ZY180L
zy180r
600V 300A igbt dc to dc power supply
ic equivalent MID 400
thermal simulation of IC package
MII400-12E4
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1500-0075X2
Abstract: No abstract text available
Text: VMM 1500-0075X2 Dual Power MOSFET Module VDSS = 75 V ID25 = 1560 A RDS on = 0.38 mΩ Phaseleg Configuration 8 9 11 VDSS TVJ = 25°C to 150°C Maximum Ratings 75 V ± 20 V u VGS TC = 25°C TC = 80°C j j 1560 1240 A A IF25 IF80 TC = 25°C (diode) j TC = 80°C (diode) j
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1500-0075X2
20100629a
1500-0075X2
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Untitled
Abstract: No abstract text available
Text: VMM 650-01F Dual Power HiPerFETTM Module VDSS = 100 V ID25 = 680 A Ω RDS on = 1.8 mΩ Phaseleg Configuration Preliminary Data Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ¬ ¬ ¬ ¬ ID25 ID80 TC = 25°C TC = 80°C
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650-01F
UL758,
ZY180L
350mm
ZY180R
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MDI400-12E4
Abstract: ZY180L MID400-12E4 MII400-12E4
Text: MII400-12E4 IGBT Module Preliminary Data phaseleg and chopper topolgies with optional temperature sensor MII 400-12E4 MID 400-12E4 T 3 T1 3 T1 D1 8 D11 2 8 1 9 T2 1 T2 D2 10 2 1 9 D2 2 2 6 7 Features IGBTs T1 - T2 Conditions VCES TVJ = 25°C to 125°C Maximum Ratings
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MII400-12E4
400-12E4
400-12E4
ZY180L
350mm
ZY180R
20090812c
MDI400-12E4
MID400-12E4
MII400-12E4
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DIN970
Abstract: ZY180L ZY180R
Text: VMM 1500-0075X2 Dual Power MOSFET Module VDSS = 75 V ID25 = 1560 A RDS on = 0.38 mΩ Phaseleg Configuration 8 9 11 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C j j 1560 1240 A A IF25 IF80 TC = 25°C (diode) j
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1500-0075X2
20100629a
DIN970
ZY180L
ZY180R
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ZY180R
Abstract: UL758 ZY180L C 12 PH diode 1000-01P
Text: VMM 1000-01P VDSS = 100 V ID25 = 1000 A Ω RDS on = 0.75 mΩ Dual Trench MOSFET Module Phaseleg Configuration Preliminary data 3 8 9 1 11 10 2 Features MOSFET T1 + T2 Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C ① ① IF25 IF80 (diode) TC = 25°C
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1000-01P
ZY180L
350mm
ZY180R
UL758,
UL758
C 12 PH diode
1000-01P
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ZY18
Abstract: ZY180L ZY180R
Text: MII 400-12E4 MID 400-12E4 MDI 400-12E4 IGBT Module phaseleg and chopper topolgies IC25 = 420 A = 1200 V VCES VCE sat typ. = 2.2 V Preliminary 3 T1 3 D1 D1 8 1 9 D2 11 2 10 1 T2 T2 8 D11 9 1 D12 11 D2 2 10 MII 3 T1 2 MID MDI Features IGBTs T1-T2 • IGBT Symbol
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400-12E4
ZY180L
350mm
ZY180R
ZY18
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information MII 400-12E4 IGBT Module Phase-leg topolgy IC25 = 420 A = 1200 V VCES VCE sat typ. = 2.2 V 3 8 9 1 11 10 2 Features IGBTs • IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES 1200 V ± 20 V IC25 IC80 TC = 25°C
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400-12E4
UL758,
ZY180L
350mm
ZY180R
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TF WIRE
Abstract: vmm 90-09f
Text: VMM 90-09F Advanced Technical Information VDSS = 900 V ID25 = 85 A Ω RDS on = 76 mΩ Dual Power HiPerFETTM Module Phaseleg Configuration 3 8 9 1 11 10 2 6 7 NTC Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 900 V ±20
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90-09F
UL758,
ZY180L
350mm
ZY180R
TF WIRE
vmm 90-09f
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information VMM 90-09F VDSS Dual Power HiPerFETTM Module ID25 RDS on = 900 V = 85 A Ω = 76 mΩ Phaseleg Configuration Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 900 V ±20 V ID25 ID80 TC = 25°C
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PDF
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90-09F
UL758,
ZY180L
350mm
ZY180R
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information MegaMOSTMFET Module VMO 580-02F VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25 ID80 TC = 25°C
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580-02F
UL758,
ZY180L
350mm
ZY180R
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ZY180R
Abstract: No abstract text available
Text: Advanced Technical Information VII 420-03S4 IGBT Module High Speed Low VCEsat 3 8 9 1 11 10 2 IC25 = 425 A = 300 V VCES VCE sat typ. = 1.5 V 6 7 IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES 300 V ± 20 V Features ● ● ● IC25
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420-03S4
UL758,
ZY180L
350mm
ZY180R
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Untitled
Abstract: No abstract text available
Text: VMM 1000-01P VDSS = 100 V ID25 = 1000 A Ω RDS on = 0.75 mΩ Dual Trench MOSFET Module Phaseleg Configuration Preliminary data 3 8 9 1 11 10 2 Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 100 V ±20 V ID25 ID80 TC = 25°C
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1000-01P
UL758,
ZY180L
350mm
ZY180R
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D-68623
Abstract: ZY180L ZY180R UL758
Text: Advanced Technical Information MegaMOSTMFET Module VMO 580-02T VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25
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580-02T
UL758,
ZY180L
350mm
ZY180R
D-68623
UL758
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ZY180L
Abstract: ZY180R
Text: MII 300-12 E4 IGBT Module phaseleg IC25 = 280 A VCES = 1200 V VCE sat typ. = 2.2 V Preliminary data 3 T1 D1 8 1 9 T2 D2 11 2 10 Features IGBTs T1 - T2 Conditions VCES TVJ = 25°C to 125°C Maximum Ratings VGES 1200 V ± 20 V IC25 IC80 TC = 25°C TC = 80°C
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PDF
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UL758,
ZY180L
350mm
ZY180R
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Untitled
Abstract: No abstract text available
Text: VMM 90-09F VDSS = 900 V ID25 = 85 A Ω RDS on = 76 mΩ Dual Power HiPerFETTM Module Phaseleg Configuration 3 8 9 1 11 10 2 6 7 NTC Features MOSFET T1 + T2 Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 900 V ±20 V ID25 ID80 TC = 25°C
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90-09F
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ZY180L
Abstract: ZY180R 650-01F UL758 VMM 650-01F
Text: VMM 650-01F Dual Power HiPerFETTM Module VDSS = 100 V ID25 = 680 A RDS on = 1.8 mW Phaseleg Configuration Preliminary Data Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 100 V ±20 V ID25 ID80 TC = 25°C TC = 80°C ① ①
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650-01F
UL758,
ZY180L
350mm
ZY180R
650-01F
UL758
VMM 650-01F
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