16N50
Abstract: 16N50P IXFA16N50P IXFH16N50P IXFP16N50P IXYS Corporation
Text: IXFA16N50P IXFP16N50P IXFH16N50P PolarHVTM HiperFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 16A Ω ≤ 400mΩ ≤ 200ns TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS
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IXFA16N50P
IXFP16N50P
IXFH16N50P
200ns
O-263
O-220
O-24icoFarads
16N50P
5J-745
16N50
IXFA16N50P
IXFH16N50P
IXFP16N50P
IXYS Corporation
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Untitled
Abstract: No abstract text available
Text: Axial Lead & Cartridge Fuses 3AB > Fast-Acting > 505 Series 505 Series, Lead-free 3AB, Fast-Acting Fuse Description " "3$5 '&(3$/,& 64(8,5+3(/$3-$%.(,05(33625 ,0*3$5,0*,0$&1/2$&5 9 //2$&-$*(8+,&+,48(.
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450VAC
250VDC
500VAC
500VDC
com/series/505
000EP
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Untitled
Abstract: No abstract text available
Text: Axial Lead & Cartridge Fuses 3AB > Fast-Acting > 505 Series 505 Series, Lead-free 3AB, Fast-Acting Fuse Description " "3$5 '&(3$/,& 64(8,5+3(/$3-$%.(,05(33625 ,0*3$5,0*,0$&1/2$&5 9 //2$&-$*(8+,&+,48(.
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450VAC
250VDC
500VAC
500VDC
com/series/505
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IXBH16N170
Abstract: 16N170 IXBT16N170
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = 1700V IC90 = 16A VCE sat ≤ 3.3V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBH16N170
IXBT16N170
O-247
16N170
IXBH16N170
IXBT16N170
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Untitled
Abstract: No abstract text available
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 16A VCE sat ≤ 3.3V IXBH16N170 IXBT16N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBH16N170
IXBT16N170
O-247
16N170
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400v 20 amp mosfet
Abstract: APT6032HLL
Text: APT6032HLL 600V 16A 0.320Ω R POWER MOS 7 MOSFET TO-258 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT6032HLL
O-258
O-258
400v 20 amp mosfet
APT6032HLL
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3bdaa
Abstract: A45B 50B06 D876
Text: 123455617897A6666 6 81 983B6 6!"B6##47456!"B7433$74B45387B B B 1 %99$7!9&B447B'!5B2 B B54!7B*478B 1 6 6!"B8$$B+, B 1 -94""45B744!!6"6&.B4/45B4"81BDB!B 1 ,!"67!40B!50B4A47!$74B98A453!40B 1 -94""45B"85 47AB3!6"6&B
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123455617897A6666
45387B
B4/45B
74B98A
47AB3
81BA4
74A45
33B985
38BCDEF61D
345387B
3bdaa
A45B
50B06
D876
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GFM 64A
Abstract: GDV 64A GFM 85A 625 GFG SA40A GFM 57, TVS 33 TVS SMC tvs SMC MARKING GHR 26A 79mcc
Text: MCC TRANSIENT VOLTAGE SUPPRESSORS 400W TVS / DO-41 MCC PART NUMBER P4KE6.8 P4KE6.8A P4KE7.5 P4KE7.5A P4KE8.2 P4KE8.2A P4KE9.1 P4KE9.1A P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 P4KE15A P4KE16 P4KE16A P4KE18 P4KE18A P4KE20 P4KE20A P4KE22
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DO-41
P4KE10
P4KE10A
P4KE11
P4KE11A
P4KE12
P4KE12A
P4KE13
P4KE13A
P4KE15
GFM 64A
GDV 64A
GFM 85A
625 GFG
SA40A
GFM 57, TVS
33 TVS SMC
tvs SMC MARKING
GHR 26A
79mcc
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IXBH32N300
Abstract: B32N 32N30 IXBT32N300 32N300
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH32N300 IXBT32N300 VCES = 3000V IC110 = 32A VCE sat ≤ 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR
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IXBH32N300
IXBT32N300
IC110
O-247
32N300
IXBH32N300
B32N
32N30
IXBT32N300
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32N30
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 32A VCE sat ≤ 3.2V IXBH32N300 IXBT32N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR
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IC110
IXBH32N300
IXBT32N300
O-247
32N300
32N30
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48n60
Abstract: IXGH48N60 IXGH48N60A3 IXGA48N60A3 48N60A3 IXGP48N60A3 1660I C5036
Text: GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGA48N60A3 IXGH48N60A3 IXGP48N60A3 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA48N60A3
IXGH48N60A3
IXGP48N60A3
IC110
O-263
O-247
O-220
48N60A3
7-10-08-A
48n60
IXGH48N60
IXGH48N60A3
IXGA48N60A3
IXGP48N60A3
1660I
C5036
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT w/ Sonic Diode IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 70ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M
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IXGT16N170A
IXGH16N170A
IXGT16N170AH1
IXGH16N170AH1
338B2
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Untitled
Abstract: No abstract text available
Text: IXGH 32N170A IXGT 32N170A High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 21 A ICM TC = 25°C, 1 ms
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32N170A
405B2
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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48n60a3
Abstract: No abstract text available
Text: GenX3TM 600V IGBT w/Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.35V IXGH48N60A3D1 Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V
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IC110
IXGH48N60A3D1
O-247
48n60a3
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IXGH 32N170A
Abstract: 32N170A IXGT32N170A
Text: IXGH 32N170A IXGT 32N170A High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 21 A ICM TC = 25°C, 1 ms
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32N170A
O-247
405B2
IXGH 32N170A
32N170A
IXGT32N170A
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Untitled
Abstract: No abstract text available
Text: IXGH48N60A3D1 GenX3TM 600V IGBT w/Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V
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IXGH48N60A3D1
IC110
O-247
IC110
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IXGH48N60A3D1
Abstract: 48N60A3 48n60 IXGH48N60
Text: GenX3TM 600V IGBT with Diode IXGH48N60A3D1 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGH48N60A3D1
IC110
O-247
062in.
IXGH48N60A3D1
48N60A3
48n60
IXGH48N60
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32N90B2
Abstract: 32n90
Text: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30
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32N90B2
IC110
O-247
O-268
32N90B2
32n90
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40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30
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32N90B2
IC110
O-247
O-268
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Untitled
Abstract: No abstract text available
Text: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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SM6F151*
SM6F251*
SM6F351*
SM6F451*
T0254AA
T0258AA
FT0258AA
HDS100
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T0257AA
Abstract: No abstract text available
Text: SEMTECH CORP SflE D • fl 1 3 T 1 3 ^ SUPERFAST RECTIFIERS IN HERMETIC ISOLATED T0257AA PACKAGE DD03007 Olb SM1U21* SM1U41* SM1U51* SM1U61* These devices offer two ultrafast rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0257AA
DD03007
SM1U21*
SM1U41*
SM1U51*
SM1U61*
T0258AA
FT0258AA
HDS100
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T0254AA
Abstract: T0257AA
Text: sôe d SEMTECH CORP m 000301S n s DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AA PACKAGE «SET SM1S41 * SM1S01 * These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryilia substrates ensures the lowest possible thermal impedance,
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000301S
T0257AA
SM1S41
SM1S01
T0258AA
FT0258AA
HDS100
T0254AA
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