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TRANSISTOR J477 Abstract: TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17 Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT18HW355S AFT18HW355SR6 1805-he AFT18HW355S TRANSISTOR J477 TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT18HW355S AFT18HW355SR6	PDF
MD8IC970NR1 Abstract: GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage	Original	MD8IC970N MD8IC970NR1 MD8IC970GNR1 GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT	PDF
TRANSISTOR J477 Abstract: TRANSISTOR J477 48 AFT18HW355S C5750Y5V1H226Z Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT18HW355S AFT18HW355SR6 1805-he AFT18HW355S TRANSISTOR J477 TRANSISTOR J477 48 C5750Y5V1H226Z	PDF
gsc3 Abstract: GRM188R71C104K01D ATC600F4R7BT250XT Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 0, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage	Original	MD8IC970N MD8IC970NR1 MD8IC970N gsc3 GRM188R71C104K01D ATC600F4R7BT250XT	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage	Original	MD8IC970N MD8IC970N MD8IC970NR1 MD8IC970GNR1	PDF
Untitled Abstract: No abstract text available Text: Document Number: MD8IC925N Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on−chip matching that makes it usable from 728 to 960 MHz. This multi−stage	Original	MD8IC925N MD8IC925N MD8IC925NR1 MD8IC925GNR1	PDF
transistor j241 Abstract: j241 J241 transistor Text: Document Number: A2T07H310-24S Rev. 0, 6/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to	Original	A2T07H310--24S A2T07H310-24SR6 transistor j241 j241 J241 transistor	PDF
81A7031-50-5F Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: A2T07D160W04S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth	Original	A2T07D160W04S A2T07D160W04SR3 81A7031-50-5F	PDF
ATC600S470JT250XT Abstract: SG73P2AT GRM31MR71H105KA88L GRM188R71C104K01D RK73H2ATTD10R0F Soshin GSC362 J506 equivalent SG73P2ATTD Rogers RO4350B R8C35 Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 1, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage	Original	MD8IC970N MD8IC970N MD8IC970NR1 ATC600S470JT250XT SG73P2AT GRM31MR71H105KA88L GRM188R71C104K01D RK73H2ATTD10R0F Soshin GSC362 J506 equivalent SG73P2ATTD Rogers RO4350B R8C35	PDF
Untitled Abstract: No abstract text available Text: EDD NOTES: U N LESS OTHERWISE SPECIFIED, TOLERANCES ARE ± [2 .5 4 m m ] [ 1 .02m m ] DRAWING NO.: B .090 [2 .2 9 m m ] " f BZ5 9 .200 [5 .0 8 m m ] I 81A7031F .010” [,254m m ]. i .160 [4 .0 6 m m ] REV. 2X .023 [,5 8 m m ] 2X" .030 [,7 6 m m ] MATERIALS:	OCR Scan	81A7031 2Y194	PDF