HY57V168010C
Abstract: HY57V168010CLTC-8 HY57V168010CLTC-10S
Text: HY57V168010C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010C is organized as 2banks of
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HY57V168010C
HY57V168010C
216-bits
576x8.
400mil
44pin
HY57V168010CLTC-8
HY57V168010CLTC-10S
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HY57V168010C
Abstract: hy57v168010 HY57V168010CTC-10 hy57v16801 HY57V168010CLTC-10S 1SD31-11-MAR98 hy57v168010cltc 1sd31
Text: HY57V168010C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010C is organized as 2banks of
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Original
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HY57V168010C
HY57V168010C
216-bits
576x8.
1SD31-11-MAR98
400mil
44pin
hy57v168010
HY57V168010CTC-10
hy57v16801
HY57V168010CLTC-10S
1SD31-11-MAR98
hy57v168010cltc
1sd31
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HYM7V65400
Abstract: No abstract text available
Text: HYM7V65400C F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
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HYM7V65400C
4Mx64
44-pin
168-pin
HYM7V65400
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HY57V164010C-10
Abstract: hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S
Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of
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HY57V164010C
HY57V164010C
216-bits
152x4.
1SD30-11-MAR98
400mil
44pin
HY57V164010C-10
hy57v16
HY57V164010
HY57V168010
1SD30-11-MAR98
HY57V164010CLTC-10S
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PDF
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hy57v168010c
Abstract: HYM7V65400CLTFG-10P HYM7V65400
Text: HYM7V65400C F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
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Original
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HYM7V65400C
4Mx64
44-pin
168-pin
hy57v168010c
HYM7V65400CLTFG-10P
HYM7V65400
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KM48S8030BT-GL
Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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PC100
KM48S8030BT-GL
nn5264805tt-b60
KM48S2020CT-GL
0364804CT3B-260
d4564163g5
nt56v1680a0t
D4564841g5
81F641642B-103FN
M5M4V16S30DTP
Siemens 9832
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KM416S4030BT-G10
Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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PC100
KM416S4030BT-G10
KM48S2020CT-GL
81F641642B-103FN
d4564163g5
S9745-M06
M5M4V16S30DTP
gm72v661641ct7j
D4564163G5-A10-9JF
D4516821AG5
D4516821
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HYM7V65200CLTFG
Abstract: hy57v168010cltc HYM7V65200C
Text: HYM7V65200C F-Series Unbuffered 2Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65200C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eight 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
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HYM7V65200C
2Mx64
44-pin
168-pin
HYM7V65200CLTFG
hy57v168010cltc
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hy57v168010
Abstract: TCK-270 HY57V168010CLTC-10S HY57V168
Text: HYM7V75A200C F-Series Unbuffered 2Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A200C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of nine 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
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HYM7V75A200C
2Mx72
44-pin
168-pin
hy57v168010
TCK-270
HY57V168010CLTC-10S
HY57V168
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hy57v16801
Abstract: No abstract text available
Text: HYM7V75A400C F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33µF and one 0.1µF decoupling capacitors are mounted for each SDRAM.
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HYM7V75A400C
4Mx72
44-pin
168-pin
hy57v16801
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KM48S8030BT-GL
Abstract: NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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Original
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PC100
KM48S8030BT-GL
NT56V1680A0T
D4516821AG5
KM416S4030BT-GL
81f641642b103fn
KM48S2020CT-GL
D4516821AG5-A107JF
gm72v661641ct7j
TC59S6408BFT80
D4564163G5
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hy57v168010b
Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x
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OCR Scan
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256Kx16
HY57V41610TC
400mil
16Mbit
1Mx16
HY57V16401
HY57V168010BTC
HY57V161610BTC
44pin)
hy57v168010b
ddr sdram 128Mbit 8Mx16
54-PIN
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HY57V168
Abstract: hy57v168010 1sd31 66MHz
Text: - H Y U N D A I > -• H Y 5 7 V 1 6 8 0 1 0 C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y57V 168010C is a 1 6 ,7 7 7 , 216-bits C M OS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. H Y 57V 168010C is organized as 2banks of
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OCR Scan
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168010C
216-bits
576x8.
57V168010C
400mil
44pin
047CK
1SD31-11-MAR98
HY57V168
hy57v168010
1sd31
66MHz
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HY57V164010
Abstract: No abstract text available
Text: -H Y U N D A I - • H Y 57V 164010D 2 Banks X ZU X 4 Bit Synchronous DRAM DESCRIPTION Preliminary The Hyundai HY57V164010D is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of
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OCR Scan
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164010D
HY57V164010D
216-bits
152x4.
400mil
44pin
40-10-M
HY57V164010
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HY57V168
Abstract: hy57v168010b hym7v64200 hy57v168010a HYM7V64400 HYM7V64400TFG PC100 HYM7V65400 HYM7V64200TFG pc66
Text: •HYUN DAI Sync. DRAM MODULE - 1 TYPE 168Pin DIMM SIZE 8MB DESCRIPTION 1M X 64 Sync. Unbuffered 16MB 2M X 64 Sync. X HYM7V64200BTRG HYM7V64200TFG HYM7V64200BTFG HYM7V65200CLTFG 72 Sync., ECC HYM7V72A2Q0TFG HYM7V72A200BTFG HYM7V75A2Ö0CLTFG 64 Sync. HYM7V64400TKG
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OCR Scan
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168Pin
HYM7V641OOTRG
HYM7V64100BTRG
HYM7V6420
8/10P/10S
8/10P/t0S
HYM7V64200BTRG
HYM7V64200TFG
HYM7V64200BTFG
HYM7V65200CLTFG
HY57V168
hy57v168010b
hym7v64200
hy57v168010a
HYM7V64400
HYM7V64400TFG
PC100
HYM7V65400
pc66
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PDF
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Untitled
Abstract: No abstract text available
Text: - H Y U N D A I • H Y M 7 V 6 5 4 0 0 C F -S E R IE S Unbuffered 4M*64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM m odule consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
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OCR Scan
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HYM7V65400C
44-pin
168-pin
7oef43-iS>
004/-D-1QÌ
C-054
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PDF
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Untitled
Abstract: No abstract text available
Text: -H Y U N D A I — • H Y M 7 V 6 5 2 0 0 C F -S E R IE S Unbuffered 2Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65200C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eight 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin gtass-epoxy
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OCR Scan
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2Mx64
HYM7V65200C
44-pin
168-pin
ft0-06+
004aQ
4J550
0-100f2
85HW5
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PDF
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HY57V168
Abstract: No abstract text available
Text: »fl Y U M 0 A I * H YM 7V 75A 400C F-SER IES Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSO P 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33fiF and one 0.1 nF decoupling capacitors are mounted for each SDRAM.
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OCR Scan
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4Mx72
HYM7V75A400C
44-pin
168-pin
33fiF
HY57V168
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