Untitled
Abstract: No abstract text available
Text: PTFC262157SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157SH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum
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PTFC262157SH
PTFC262157SH
H-34288G-4/2
c262157sh-gr1
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Untitled
Abstract: No abstract text available
Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C160I2D
14GHz
25deg
/-10MHz
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TL139
Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to
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PTFB183404F
PTFB183404F
340-watt
H-37275-6/2
TL139
PTFB183404
PTFB183404EF
TL148
TRANSISTOR tl131
TL162
TL170
tl172
c105 TRANSISTOR
TL145
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TL107 linear
Abstract: TRANSISTOR tl131
Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805
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PTFB182557SH
PTFB182557SH
250-watt
H-34288G-4/2
TL107 linear
TRANSISTOR tl131
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CS3376C
Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101
Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN35C070I2D
43dBm
/-10MHz
CS3376C
GRM188B11H102KA01D
ATC100B100JW500
risho
GRM188B31H104KA92D
EGN35C070I2D
GSC364-HYB3500
JESD22-A114
MCR03EZPJ101
MCR18EZPJ101
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Untitled
Abstract: No abstract text available
Text: PTFB192557SH Thermally-Enhanced High Power RF LDMOS FET 255 W, 28 V, 1930 – 1990 MHz Description The PTFB192557SH is a 250-watt LDMOS FET designed specifically for use in Doherty cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Input and output matching has been
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PTFB192557SH
PTFB192557SH
250-watt
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Untitled
Abstract: No abstract text available
Text: PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum
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PTFC262157FH
PTFC262157FH
H-34288G-4/2
c262157sh-gr1
48stances.
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TL235
Abstract: TL236 TL230 TRANSISTOR tl131 TL1251
Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier
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PTFB211803EL
PTFB211803FL
PTFB211803FL
180-watt
H-33288-6
H-34288-6
TL235
TL236
TL230
TRANSISTOR tl131
TL1251
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GRM1882C1H100J
Abstract: No abstract text available
Text: EGN16C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN16C105MK
25deg
D10MHz
45dBm
/-10MHz
GRM1882C1H100J
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TRANSISTOR tl131
Abstract: TL136 tl2322 TL2222 c103 TRANSISTOR TL237 TRANSISTOR c104 C801 C802 C803
Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications
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PTFB211803EL
PTFB211803FL
PTFB211803EL
PTFB211803FL
180-watt
TRANSISTOR tl131
TL136
tl2322
TL2222
c103 TRANSISTOR
TL237
TRANSISTOR c104
C801
C802
C803
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Untitled
Abstract: No abstract text available
Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET specifically designed for use in Doherty cellular power amplifier applications in the 1805
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PTFB182557SH
PTFB182557SH
250-watt
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TL139
Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications
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PTFB183404E
PTFB183404F
PTFB183404F
340-watt
H-36275-8
H-37275-6/2
TL139
TL205
PTFB183404
transistor TL131
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Untitled
Abstract: No abstract text available
Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.
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PTFB183408SV
PTFB183408SV
340-watt
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Untitled
Abstract: No abstract text available
Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to
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PTFB183408SV
PTFB183408SV
340-watt
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Untitled
Abstract: No abstract text available
Text: EGN35C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain : 15.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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Original
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EGN35C070I2D
25deg
/-10MHz
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Untitled
Abstract: No abstract text available
Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications
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PTFB211803EL
PTFB211803FL
PTFB211803EL
PTFB211803FL
180-watt
H-34288-4/2
21ngerous
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TL172
Abstract: TL170
Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications
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PTFB183404E
PTFB183404F
PTFB183404E
PTFB183404F
340-watt
H-37275-6/2
TL172
TL170
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CS3376C
Abstract: EGN35C070I2D CS-3376C TZY2Z010A001 GRM188B11H102KA01D GSC364 HYB3500 JESD22-A114 MCR18EZPJ101 GRM188B11h
Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN35C070I2D
43dBm
/-10MHz
CS3376C
EGN35C070I2D
CS-3376C
TZY2Z010A001
GRM188B11H102KA01D
GSC364
HYB3500
JESD22-A114
MCR18EZPJ101
GRM188B11h
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TL2322
Abstract: transistor tl120
Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications
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PTFB211803EL
PTFB211803FL
PTFB211803FL
180-watt
H-33288-6
H-34288-4/2
TL2322
transistor tl120
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TL239
Abstract: TL140 TL230 Tl141 TL249 TL142 TL235 TL-141 tl144 tl241
Text: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB213208SV
PTFB213208SV
320-watt
H-34275-6/2
TL239
TL140
TL230
Tl141
TL249
TL142
TL235
TL-141
tl144
tl241
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