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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Control No. : GSC-0364-E Established on Jun 1, 2011 Product Information 1. 3500MHz Band 90deg Chip Hybrid Coupler 1.1 TYPE No. : GSC364-HYB3500 RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 5.0 0.4 0.4 2 1 1.5 2 1.5 1	Original	GSC-0364-E 3500MHz 90deg GSC364-HYB3500 GSC364 25degC) 35degC 125deg	PDF
Untitled Abstract: No abstract text available Text: Control No. : GSC-0364-E Established on Jun 1, 2011 Product Information 1. 3500MHz Band 90deg Chip Hybrid Coupler 1.1 TYPE No. : GSC364-HYB3500 RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 5.0 0.4 0.4 2 1 1.5 2 1.5 1	Original	GSC-0364-E 3500MHz 90deg GSC364-HYB3500 GSC364 25degC) 35degC 125deg	PDF
CS3376C Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101 Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	EGN35C070I2D 43dBm /-10MHz CS3376C GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101	PDF
Untitled Abstract: No abstract text available Text: EGN35C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain : 15.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	EGN35C070I2D 25deg /-10MHz	PDF
CS3376C Abstract: EGN35C070I2D CS-3376C TZY2Z010A001 GRM188B11H102KA01D GSC364 HYB3500 JESD22-A114 MCR18EZPJ101 GRM188B11h Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	EGN35C070I2D 43dBm /-10MHz CS3376C EGN35C070I2D CS-3376C TZY2Z010A001 GRM188B11H102KA01D GSC364 HYB3500 JESD22-A114 MCR18EZPJ101 GRM188B11h	PDF