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    MCR18EZPJ101 Price and Stock

    ROHM Semiconductor MCR18EZPJ101

    RES SMD 100 OHM 5% 1/4W 1206
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    DigiKey MCR18EZPJ101 Cut Tape 1
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    MCR18EZPJ101 Digi-Reel 1
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    MCR18EZPJ101 Reel 5,000
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    Bristol Electronics MCR18EZPJ101 430
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    Quest Components MCR18EZPJ101 78,237
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    ComSIT USA MCR18EZPJ101 350,000
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    Chip One Stop MCR18EZPJ101 Cut Tape 1,430
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    CoreStaff Co Ltd MCR18EZPJ101 98,447
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    Others MCR18EZPJ101

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    Chip 1 Exchange MCR18EZPJ101 9,074
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    MCR18EZPJ101 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MCR18EZPJ101 ROHM RES 100 OHM 1/4W 5% 1206 SMD Original PDF

    MCR18EZPJ101 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN21C160I2D 14GHz 25deg /-10MHz PDF

    GRM1882C1H100J

    Abstract: No abstract text available
    Text: SGN27C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		SGN27C210I2D 655GHz /-10MHz 48dBm GRM1882C1H100J PDF

    CS3376C

    Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101
    Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN35C070I2D 43dBm /-10MHz CS3376C GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101 PDF

    GRM1882C1H100J

    Abstract: No abstract text available
    Text: EGN16C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN16C105MK 25deg D10MHz 45dBm /-10MHz GRM1882C1H100J PDF

    QPO-1LZ

    Abstract: No abstract text available
    Text:   QPO-1-EVAL1 QPO-1-EVAL1 User’s Guide Description: Features: The QPO-1-EVAL1 is designed to allow full testing of the QPO1LZ, along with its various performance options, to fully optimize a final system design. The board offers two terminal options for vertical or horizontal mounting. The user must


    Original     		PDF

    RY130

    Abstract: ry185 Piher* pot 47K Ry110 RY182 Piher* pot 470K RY169 3296 Variable Resistor terminals BOURNS MRS16T UR73D3ATTE10L0F
    Text: An invaluable resource for buyers and engineers This particular book presents Anglia’s primary resistor product lines sourced from six key suppliers. Compiled in a convenient format to assist both buyers and engineers, it provides all the essential data and part numbers to aid the


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: EGN35C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain : 15.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN35C070I2D 25deg /-10MHz PDF

    CS3376C

    Abstract: EGN35C070I2D CS-3376C TZY2Z010A001 GRM188B11H102KA01D GSC364 HYB3500 JESD22-A114 MCR18EZPJ101 GRM188B11h
    Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN35C070I2D 43dBm /-10MHz CS3376C EGN35C070I2D CS-3376C TZY2Z010A001 GRM188B11H102KA01D GSC364 HYB3500 JESD22-A114 MCR18EZPJ101 GRM188B11h PDF