Untitled
Abstract: No abstract text available
Text: CT337/CS337 CotoMOS CT337/CS337 The CT337 and CS337 feature current switching capability to 360mA with a low on resistance of 1.6Ω Maximum. Designed for Security, Measurement and Instrumentation applications the CotoMOS® relay is capable of handling 60V load conditions. If
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CT337/CS337
CT337
CS337
360mA
CT337/CS337
1500Vrms
5000Vrms
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PDF
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Untitled
Abstract: No abstract text available
Text: CT337/CS337 CotoMOS CT337/CS337 he CT337 and CS337 feature current switching capability to 360mA with a low on resistance of 1.6Ω Maximum. Designed for Security, Measurement and Instrumentation applications the CotoMOS® relay is capable of handling 60V load conditions. If
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Original
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CT337/CS337
CT337
CS337
360mA
CT337/CS337
1500Vrms
5000Vrms
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PDF
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1F0H-1F7H configuration pio
Abstract: S3 TRIO 64 HT6560A HT6560B DAT00 6560B DD15 LD11 LD12 LD04
Text: HT6560B Enhanced VL_Bus IDE Controller Features • • • • • • • • Pin-to-pin backward compatible with HT6560A VL_Bus IDE controller IDE interface to 486 and 386 DX/SX local bus VESA VL_Bus rev 1.0 compatible Connects directly to VL_Bus and IDE interface, no extra TTL needed
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HT6560B
HT6560A
HT-6560B/C
CS37XN
1F0H-1F7H configuration pio
S3 TRIO 64
HT6560B
DAT00
6560B
DD15
LD11
LD12
LD04
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PDF
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Untitled
Abstract: No abstract text available
Text: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency
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EGN21C105I2D
14GHz
14GHz
25deg
/-10MHz
45dBm
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PDF
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EGN26C070I2D
Abstract: No abstract text available
Text: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
25deg
/-10MHz
EGN26C070I2D
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PDF
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Untitled
Abstract: No abstract text available
Text: EGN21C320IV High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 55.0dBm typ. @ Psat -High Efficiency: 65%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency
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EGN21C320IV
14GHz
14GHz
25deg
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PDF
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SPIF3811
Abstract: PCI7412 Quanta at7 915GM foxconn BCM4401E EX C747 BT 342 project Socket AM2 quanta
Text: 5 4 3 2 1 ZB1 SYSTEM BLOCK DIAGRAM DVI / 7307 Chrontel Yonah/Merom 479 uFCPGA U44 X'TAL 14.318MHZ P41 Thermal Sensor P5 U64 P3,P4 PCI-Express X 2 Docking Connector CPU TV out / CRT Switch TV in with PCIE1~2 , Lan ,Ser & Par Port , D Clock Generator ICS954310BGLF
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318MHZ
ICS954310BGLF
MAX4892
2N7002
SPIF3811
945GM/PM
10/100/1G
IEEE1394.
PCI7412
Quanta at7
915GM
foxconn
BCM4401E
EX C747
BT 342 project
Socket AM2
quanta
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PDF
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B4846
Abstract: S21 Package GRM188B11H102KA01D CS3376C
Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C105I2D
/-10MHz
45dBm
/-10MHz
B4846
S21 Package
GRM188B11H102KA01D
CS3376C
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PDF
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Untitled
Abstract: No abstract text available
Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C160I2D
14GHz
25deg
/-10MHz
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PDF
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GRM1882C1H100J
Abstract: No abstract text available
Text: SGN27C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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SGN27C210I2D
655GHz
/-10MHz
48dBm
GRM1882C1H100J
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PDF
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6-10 Ghz RF Power 100w amplifier
Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
/-10MHz
6-10 Ghz RF Power 100w amplifier
2S110
GSC356-HYB2300
GRM55ER72A475K
EGN26C070I2D
GRM188B11H102KA01D
60Ghz
GaN amplifier 100W
GRM188B31H104KA92D
JESD22-A114
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PDF
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CS3376C
Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101
Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN35C070I2D
43dBm
/-10MHz
CS3376C
GRM188B11H102KA01D
ATC100B100JW500
risho
GRM188B31H104KA92D
EGN35C070I2D
GSC364-HYB3500
JESD22-A114
MCR03EZPJ101
MCR18EZPJ101
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PDF
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SPIF3811
Abstract: CT-10K TST*1284a tst1284a lf m5285 foxconn ATI 216 PCI7412 quanta L7837
Text: 5 4 3 2 1 ZB1 SYSTEM BLOCK DIAGRAM DVI / 7307 Chrontel Yonah/Merom 479 uFCPGA U44 X'TAL 14.318MHZ P41 Thermal Sensor U64 P3,P4 PCI-Express X 2 Docking Connector CPU TV out / CRT with PCIE1~2 , Lan P5 Switch TV in ,Ser & Par Port , D Clock Generator ICS954310BGLFP2
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Original
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318MHZ
ICS954310BGLF
MAX4892
2N7002
SPIF3811
945GM/PM
10/100/1G
IEEE1394.
CT-10K
TST*1284a
tst1284a lf
m5285
foxconn
ATI 216
PCI7412
quanta
L7837
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PDF
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2S110
Abstract: GRM188B11H102KA01D
Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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Original
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EGN26C070I2D
/-10MHz
/-10MHz
2S110
GRM188B11H102KA01D
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PDF
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|
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GRM1882C1H100J
Abstract: No abstract text available
Text: EGN16C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN16C105MK
25deg
D10MHz
45dBm
/-10MHz
GRM1882C1H100J
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PDF
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EKZE101
Abstract: GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001
Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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Original
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EGN21C105I2D
14GHz
14GHz
/-10MHz
45dBm
EKZE101
GaN amplifier 100W
GRM55ER72A475K
grm188b11h102ka01d
105w
ATC100B
Soshin
JESD22-A114
MCR18
TZY2Z010A001
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PDF
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BMD101
Abstract: lm358-2.5 CS00003J951 quanta foxconn CH52202MA91 CS168 a25 cm1 100u 18p B1317 quanta computer
Text: 5 4 3 2 1 K2W Block Diagram 1 Dothan+Alviso 915PM +ICH6-M D CPU Thermal Sensor Intel Dothan 27W VRAM 64MB/128MB 478 PIN micro FC-BGA PCIE x 16 2.5Gb/s VGA Chip ATI M24/M26 R,G,B CRT Port S-Video C Channel A MCH DDR2 INTERFACE, 400/533MHz Channel B Alviso 915PM
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915PM)
CV111
GMT792
64MB/128MB
400/533MHz
M24/M26
915PM
33MHZ,
TI7411
BMD101
lm358-2.5
CS00003J951
quanta
foxconn
CH52202MA91
CS168
a25 cm1 100u 18p
B1317
quanta computer
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PDF
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S3 TRIO 64
Abstract: ld18 st ide controller vl-bus ADR30 6560B LA06 1F0H-1F7H configuration pio 1F0H-1F7H LD08
Text: HT — 6560B VL_BUS ENHANCED IDE CONTROLLER DEC.07.1994 PAGE: A. General Description — HT–6560B is a VL_Bus Enhanced IDE Controller which provides a control logic and data path between 486, 386 VL_Bus and IDE drives. The HT–6560B is fully compatible with the ANSI ATA revision 4a specification for IDE hard disk
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6560B
6560B
CS37XN
S3 TRIO 64
ld18 st
ide controller
vl-bus
ADR30
LA06
1F0H-1F7H configuration pio
1F0H-1F7H
LD08
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PDF
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ene kb3926qf
Abstract: ene kb3926qf d2 ene kb3926qf a1 kb3926 kb3926qf kb3926qf d2 ene kb3926 KB3926 A01 quanta tw7 kb3926 d3
Text: 1 2 3 PCB STACK UP 5 6 31TW7MB00XX LAYER 2 : SGND1 LAYER 3 : IN1 LAYER 4 : IN2 LAYER 5 : VCC 7 DC/DC 3VSUS 5VSUS DC/DC 3VPCU 5VPCU DC/DC +1.05V +1.5V PG43 PG38 PG37 RUN POWER SW PG 43 LAYER 7 : SGND2 AC/BATT CONNECTOR PG 40 BATT CHARGER PG 40 Merom 35W CPU VR
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31TW7MB00XX
ICS9LPRS365BGLFT
23X23
128MB)
256MB)
965GM/PM
220pf
CS31002FB26
CS41002FB28
R653--
ene kb3926qf
ene kb3926qf d2
ene kb3926qf a1
kb3926
kb3926qf
kb3926qf d2
ene kb3926
KB3926 A01
quanta tw7
kb3926 d3
|
PDF
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Untitled
Abstract: No abstract text available
Text: CT126/CS126 CotoMOS CT126/CS126 The CT126 and CS126 feature high current switching capability to 2.0A with a low on resistance of 0.5Ω Maximum. Designed for Security, Measurement and Instrumentation applications the CotoMOS® relay is capable of handling 40V load conditions.
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Original
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CT126/CS126
CT126
CS126
CT126/CS126
1500Vrms
5000Vrms
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PDF
|
Untitled
Abstract: No abstract text available
Text: EGN21C210I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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Original
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EGN21C210I2D
14GHz
14GHz
25deg
/-10MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EGN35C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain : 15.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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Original
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EGN35C070I2D
25deg
/-10MHz
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PDF
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tic 1260 scr texas
Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.
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OCR Scan
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PDF
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fe3001
Abstract: No abstract text available
Text: FE3001 WESTERN DIGITAL Figure 2. FE300I Block Diagram AT Control Logic I FE3001 WESTERN DIGITAL 84 1 CLK16 CLKHS 83 CLK14 55 56 RESIN PROCLK SYSCLK DMACLK TMRCLK PCLK PCLK ftÉSÓPU CLK287 ÒLYWR DMAMR RESET ÖNBRDL" 50 CPURES 51 MNIO MÉMC316 IOCS 16 ¿EROWS
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OCR Scan
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FE3001
FE300I
CLK14
CLK16
CLK287
MC316
fe3001
|
PDF
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