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Eaton Bussmann MDQ-1-1-4 FUSE GLASS 1.25A 250VAC 3AB 3AG
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DigiKey	MDQ-1-1-4	Bulk			5	1 - 10 $32.402 100 $32.402 1000 $32.402 10000 $32.402	Buy Now
TME	MDQ-1-1-4				5	1 - 10 $28.86 100 $28.86 1000 $28.86 10000 $28.86	Get Quote
Eaton Bussmann BK-MDQ-1-1-4 FUSE GLASS 1.25A 250VAC 3AB 3AG
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DigiKey	BK-MDQ-1-1-4	Bulk			100	1 - 10 - 100 $17.4763 1000 $17.4763 10000 $17.4763	Buy Now
TME	BK-MDQ-1-1-4				100	1 - 10 - 100 $20.71 1000 $20.71 10000 $20.71	Get Quote
Eaton Corporation BK/MDQ-1-1/4 Fuse Miniature 1.25A 250V Slow Blow 2-Pin Cartridge Holder Cardboard Carton - Bulk (Alt: BK-MDQ-1-1-4)
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Avnet Americas	BK/MDQ-1-1/4	Bulk		11 Weeks	100	1 - 10 - 100 $15.4922 1000 $14.4012 10000 $14.4012	Buy Now
Mouser Electronics	BK/MDQ-1-1/4					1 - 10 - 100 $16.52 1000 $14.32 10000 $14.32	Get Quote
Eaton Corporation MDQ-1-1/4 Fuse Miniature 1.25A 250V Slow Blow 2-Pin Cartridge Holder - Bulk (Alt: MDQ-1-1-4)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MDQ-1-1/4	Bulk		14 Weeks	10	1 - 10 $20.9166 100 $19.4436 1000 $19.4436 10000 $19.4436	Buy Now
Mouser Electronics	MDQ-1-1/4					1 $31.24 10 $27.52 100 $22.31 1000 $20.82 10000 $20.82	Get Quote
Eaton Bussmann MDQ-1-1/4 Buss Small Dimension Fuse/ Bulk Rohs Compliant: No \|Eaton Bussmann MDQ-1-1/4
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Newark	MDQ-1-1/4	Bulk			5	1 - 10 $40.49 100 $32.04 1000 $30.37 10000 $30.37	Buy Now
Sager	MDQ-1-1/4				5	1 - 10 $22.32 100 $19.91 1000 $19.91 10000 $19.91	Buy Now

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DQ114 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DQ111 Abstract: DQ139 DQ131 Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply	Original	UGSN7004A8HHF-256 2000mil) 256MB 256MB 200pin 128MB 200-Pin DIMM25 DQ120 DQ121 DQ111 DQ139 DQ131	PDF
DQ111 Abstract: No abstract text available Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]	Original	SM544083U74S6UU 128MByte 4Mx16 DQ111	PDF
Untitled Abstract: No abstract text available Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,	Original	SM544028002BXGU 32MByte 32-megabyte 100-pin, 72-bit 70/80ns	PDF
BA5 marking Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99 Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package	Original	HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99	PDF
DQ124 Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79 Text: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)	Original	UG016E14488HSG 200-Pin 256MB 2560mil) DQ124 DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79	PDF
DQ112 Abstract: UG016C14488HSG-6 DQ100 DQ88 Text: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)	Original	UG016C14488HSG 200-Pin 256MB 2560mil) DQ112 UG016C14488HSG-6 DQ100 DQ88	PDF
Untitled Abstract: No abstract text available Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8	Original	UG08E14488HSG-6 200Pin U08E14488HSG-6 400mil 16bit 240mil 2000mil)	PDF
Untitled Abstract: No abstract text available Text: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8	Original	UG016C14488HSG-6 200Pin U016C14488HSG-6 400mil 20bit 240mil 2560mil)	PDF
EDI8F8259C20M6C Abstract: EDI8F8259C25M6C EDI8F8259C35M6C 256KX8 SRAM 25nS 256kx8 sram 61 sram 256kx8 Text: EDI8F8259C 256Kx8 SRAM Module 256Kx8 Static RAM CMOS, Module Features 256Kx8 bit CMOS Static The EDI8F8259C is a 2 megabit CMOS Static RAM based on two high speed 256Kx4 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. The 32 pin DIP pinout adheres to the JEDEC standard for	Original	EDI8F8259C 256Kx8 EDI8F8259C 256Kx4 01581USA EDI8F8259C20M6C EDI8F8259C25M6C EDI8F8259C35M6C 256KX8 SRAM 25nS 256kx8 sram 61 sram 256kx8	PDF
MT18DT8144G Abstract: No abstract text available Text: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM	Original	200-pin, 128MB 192-cycle MT18DT8144G DQ995 MT18DT8144G	PDF
smart modular Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8 Text: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line	Original	SM51441000 16MByte SM51441000 16-megabyte 100-pin, 72-bit 70/80ns 20/18W smart modular SMART Modular Technologies SM51441000-7 SM51441000-8	PDF
SiS301 Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18 Text: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.	Original	SiS300 128-bit SiS301 bt815 SILICON INTEGRATED SYSTEMS 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18	PDF
Untitled Abstract: No abstract text available Text: UG08C14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Fast Page Mode (FPM) operation	Original	UG08C14488HSG 2000mil) 128MB 200-Pin DQ120 DQ121 DQ122 DQ123 DQ124 DQ125	PDF
tsop 138 Abstract: DQ114 Text: UG08E14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Hyper Page Mode (EDO) operation	Original	UG08E14488HSG 2000mil) 128MB 200-Pin DQ120 DQ121 DQ122 DQ123 DQ124 DQ125 tsop 138 DQ114	PDF

HDR20X2 Abstract: 5R14 43A16 CTL036 CONN10X2 4a20 27A14 MEMDATA23 PD153 20A7 Text: 8 7 6 5 4 3 2 1 VUSB VUSB_FP3 VIN V4P6 2 J3 VIN 1 U22 TPS79601 JUMPER5STAR D 2 3 2VIN VIN 1 JP9 JP10 1 3 +5.0V DC IN 4 5 4.66V VIN_CONN VOUT4 1EN FB2 D FB5 GND 3 TABGND 6 2 FERRITE_BEAD C16 15 PF R22 84.5K 1% PJ-102A 1 2 3 4 5 6 7 8 9 10 FROM MOTHER BOARD	Original	TPS79601 PJ-102A HDR10 51GND51 67GND67 75GND75 86GND86 88GND88 27IO27 HDR20X2 5R14 43A16 CTL036 CONN10X2 4a20 27A14 MEMDATA23 PD153 20A7	PDF
Untitled Abstract: No abstract text available Text: GOULD 4055916 GOUL D IN C / GOULD A M I SEMI CONDUCTOR 03 DIV D • 03E MDSSTlb 1 1494 DQ114TM 0^ TABLE OF CONTENTS SECTION 1: DESIGN INFORMATION 1.1 CHOOSING AN ARRAY. 1-5 1.1.1 Determining Gate Count. 1-6	OCR Scan	DQ114TM	PDF
A111 Abstract: A210 DQ01-3 Text: m D EDI8M8130C/P90/100/120/150 \ _ High Performance Megabit SRAM Module 128Kx8 Static RAM CMOS, Module Features The EDI8M8130C/P is a 1024K bit CMOS Static RAM Module based on tour 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic sub	OCR Scan	ED18M8130C/P90/100/120/150 128Kx8 EDI8M8130C/P 1024K 32Kx8 EDI8MB130C/P90/100/120/150 A111 A210 DQ01-3	PDF
Untitled Abstract: No abstract text available Text: MDÌ EDI8M8130C50/60/70/80 High Speed Megabit SRAM Module 128Kx8 Static RAM CMOS, Module Features The EDI8M8130C is a 1024K bit CMOS Static RAM Module based on four 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic sub strate.	OCR Scan	EDI8M8130C50/60/70/80 128Kx8 EDI8M8130C 1024K 32Kx8 EDI8M8130C EDI8M8130CS0/60/70/80	PDF
diode LT 42 PR 3002 Abstract: A54 ZENER t60403-l4097 data sheet IC 7400 ECR3 qsc 1110 diode LT 47 PR 3002 PTC800 sft 43 A52 Optocoupler Text: Data Sheet January 1995 ; m A T& T Microelectronics T7256 Single-Chip NT1 SCNT1 Transceiver Features • U- to S/T-interface conversion for ISDN basic rate (2B+D) systems — Integrated U- and S/T-interfaces — Operates in stand-alone mode to provide Uand S/T-interface activation, control, and	OCR Scan	T7256 and0-566-9568 800-521-CORE F-06561 005002b diode LT 42 PR 3002 A54 ZENER t60403-l4097 data sheet IC 7400 ECR3 qsc 1110 diode LT 47 PR 3002 PTC800 sft 43 A52 Optocoupler	PDF
A111C Abstract: A210E a124 es A210 E3030 Text: EDI8M8130C/P90/100/120/150 m o i High Performance Megabit SRAM Module 128Kx8 Static RAM CMOS, Module Features The EDI8M8130C/P is a 1024K bit CMOS Static RAM Module based on four 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic sub	OCR Scan	EDI8M8130C/P90/100/120/150 128Kx8 EDI8M8130C/P 1024K 32Kx8 EDI8M81300P90/100/120/150 EDI8M8130C/P90/100/120/150 A111C A210E a124 es A210 E3030	PDF
i354 Abstract: 2N7222 IRFM440 IRFM440D i-354 Text: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER I& R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM440 SN7SSS JANTX2N7222 JANTXV2N7222 N-CHANNEL [REF: MIL-S-1S500/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International	OCR Scan	IRFM440 MIL-S-1S500/596] IRFM440D IRFM440U O-254 MIL-S-19B00 14A551455 i354 2N7222 IRFM440 i-354	PDF
26LS32 Abstract: 26LS32 pin diagram ci 26ls32 1241MF 41mr 41MF ci 1041 1041 1041MF 1041MT Text: AT&T Data Sheet June 1994 *- # IIW Microelectronics 41 MF, 41 MR, and 41MT Quad Differential Line Receivers Features Description • Pin equivalent to the general-trade 26LS32 device, with improved speed and reduced power con sumption The 41 MF, 41 MR, and 41 MT Quad Differential Line	OCR Scan	26LS32 1041MT-TR 1141MT 1141MT-TR 1241MT-TR 26LS32 pin diagram ci 26ls32 1241MF 41mr 41MF ci 1041 1041 1041MF 1041MT	PDF
A210C Abstract: A111 EDI8M8130C OQ215 Text: ^EDI EDI8M8130C50/60/70/80 High Speed Megabit SRAM Module 128Kx8 Static RAM CMOS, Module Features The EDI8M8130C is a 1024K bit CMOS Static RAM Module based on four 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic sub strate.	OCR Scan	EDI8M8130C50/60/70/80 128Kx8 EDI8M8130C 1024K 32Kx8 b0/60/70/80 EDI8M8130C50/60/70/80 A210C A111 OQ215	PDF
hcpl7800 Abstract: No abstract text available Text: ¥ h n \ HEWLETT WLEM PACKARD H igh CMR Iso la tio n A m p lifier Technical Data HCPL-7800 HCPL-7800A HCPL-7800B F ea tu re s • 15 k V /us C om m on-M ode R ejectio n a t VCM = 1000 V* • C om pact, A u to-In sertab le S ta n d a rd 8-pin D IP P a ck a g e	OCR Scan	HCPL-7800 HCPL-7800A HCPL-7800B DD114b5 4447SA4 5091-5714E 5962-9979E hcpl7800	PDF

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DQ114 Price and Stock

Eaton Bussmann MDQ-1-1-4

Eaton Bussmann BK-MDQ-1-1-4

Eaton Corporation BK/MDQ-1-1/4

Eaton Corporation MDQ-1-1/4

Eaton Bussmann MDQ-1-1/4

DQ114 Datasheets Context Search

DQ111

DQ111

Untitled

BA5 marking

DQ124

DQ112

Untitled

Untitled

EDI8F8259C20M6C

MT18DT8144G

smart modular

SiS301

Untitled

tsop 138

HDR20X2

Untitled

A111

Untitled

diode LT 42 PR 3002

A111C

i354

26LS32

A210C

hcpl7800