ACT-D16M96S
Abstract: BSA1 BS-B1
Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM
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ACT-D16M96S
16MegaBit
50-MHz
192-cycle
SCD3370
BSA1
BS-B1
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DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
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UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
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DQ111
Abstract: No abstract text available
Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]
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SM544083U74S6UU
128MByte
4Mx16
DQ111
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Untitled
Abstract: No abstract text available
Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,
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SM544028002BXGU
32MByte
32-megabyte
100-pin,
72-bit
70/80ns
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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DQ124
Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
Text: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)
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UG016E14488HSG
200-Pin
256MB
2560mil)
DQ124
DQ77
DQ100
DQ99
DQ87
DQ88
DQ111
DQ106
DQ72
DQ79
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DQ112
Abstract: UG016C14488HSG-6 DQ100 DQ88
Text: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)
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UG016C14488HSG
200-Pin
256MB
2560mil)
DQ112
UG016C14488HSG-6
DQ100
DQ88
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Untitled
Abstract: No abstract text available
Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8
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UG08E14488HSG-6
200Pin
U08E14488HSG-6
400mil
16bit
240mil
2000mil)
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Untitled
Abstract: No abstract text available
Text: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8
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UG016C14488HSG-6
200Pin
U016C14488HSG-6
400mil
20bit
240mil
2560mil)
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compaq presario
Abstract: compaq 510 DL847 dn602 dl850 dc connector compaq 615 Compaq battery 8 cell X1097 DL846 X1092
Text: 325388-002.book Page i Friday, October 24, 2003 9:21 AM Maintenance and Service Guide HP Pavilion Widescreen Notebook zt3000 HP Compaq Business Notebook nx7000 Compaq Presario Widescreen Notebook PC X1000 Document Part Number: 325388-002 October 2003 This guide is a troubleshooting reference used for maintaining
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zt3000
nx7000
X1000
compaq presario
compaq 510
DL847
dn602
dl850
dc connector compaq 615
Compaq battery 8 cell
X1097
DL846
X1092
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MT18DT8144G
Abstract: No abstract text available
Text: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM
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200-pin,
128MB
192-cycle
MT18DT8144G
DQ995
MT18DT8144G
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Untitled
Abstract: No abstract text available
Text: SMART SM390HGSFN3UGUU Modular Technologies September 28, 1998 Revision History • September 28, 1998 Datasheet Released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]
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SM390HGSFN3UGUU
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smart modular
Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
Text: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line
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SM51441000
16MByte
SM51441000
16-megabyte
100-pin,
72-bit
70/80ns
20/18W
smart modular
SMART Modular Technologies
SM51441000-7
SM51441000-8
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Untitled
Abstract: No abstract text available
Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics September 9, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM
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ACT-D16M96S
16MegaBit
50-MHz
SCD3370
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Untitled
Abstract: No abstract text available
Text: Standard Products ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics May 30, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 1M x 16 synchronous dynamic random access memory chips in one MCM
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ACT-D1M96S
50-MHz
SCD3369-1
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ACT-D1M96S
Abstract: No abstract text available
Text: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module Features • ■ ■ ■ ■ ■ ■ ■ 6 Low Power Micron 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2 Banks
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ACT-D1M96S
50-MHz
MIL-PRF-38534
MIL-STD-883
SCD3369-1
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SiS301
Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18
Text: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.
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SiS300
128-bit
SiS301
bt815
SILICON INTEGRATED SYSTEMS
1Mx16x4
LCD 320X200
CR10
CR14
CR16
CR18
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Untitled
Abstract: No abstract text available
Text: SM544083574S6UU June 9, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 2, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]
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SM544083574S6UU
128MByte
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SDRAM aeroflex micron die
Abstract: CKE 2009 4164 dram 524,288-word x 16-bit MT48LC16M16A2 Y16Y BA1182 DQ86 BA872
Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics September 9, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM
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ACT-D16M96S
16MegaBit
50-MHz
192-cycle
SCD3370
SDRAM aeroflex micron die
CKE 2009
4164 dram
524,288-word x 16-bit
MT48LC16M16A2
Y16Y
BA1182
DQ86
BA872
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Untitled
Abstract: No abstract text available
Text: UG08C14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Fast Page Mode (FPM) operation
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UG08C14488HSG
2000mil)
128MB
200-Pin
DQ120
DQ121
DQ122
DQ123
DQ124
DQ125
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tsop 138
Abstract: DQ114
Text: UG08E14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Hyper Page Mode (EDO) operation
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UG08E14488HSG
2000mil)
128MB
200-Pin
DQ120
DQ121
DQ122
DQ123
DQ124
DQ125
tsop 138
DQ114
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CLCC-44
Abstract: No abstract text available
Text: lêE DG884 -J ,uc' "» * Ö2S473S oaisbü? i • 8 x 4 Wideband/Video Crosspoint Array siliconix inc BENEFITS FEATURES 8 Inputs, 4 Outputs, • Reduced Board Space • Wide Bandwidth 300 MHz • Improved System Bandwidth • Very Low Crosstalk (-8 5 dB @ 5 MHz)
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DG884
CLCC-44
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toshiba tlc 711
Abstract: RDRAM Clock T3D Toshiba
Text: TO SH IB A T E N T A T IV E TC59RM716 8 MB/RB T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILIC O N M O N O L IT H IC Overview The Direct R a m b u s T M DRAM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video
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TC59RM716
128/144-Mbit
600-MHz
800-MHz
P-TFBGA62-1312-0
toshiba tlc 711
RDRAM Clock
T3D Toshiba
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DQ85
Abstract: No abstract text available
Text: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM I I I I I I Multichip Module - H eatures 6 Low Power Texas Instruments 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2 Banks High-Speed, Low-Noise, Low-Voltage TTL LVTTL
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OCR Scan
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ACT-D1M96S
50-MHz
IL-PRF-38534
MIL-STD-883
SCD3369-1
DQ85
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PDF
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