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Toshiba America Electronic Components HN1B04FU-Y,LF X34 PB-F US6 PLN (LF) TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1B04FU-Y,LF	Cut Tape	10,173		1	1 $0.22 10 $0.134 100 $0.22 1000 $0.05375 10000 $0.05375	Buy Now
	HN1B04FU-Y,LF	Digi-Reel	10,173		1	1 $0.22 10 $0.134 100 $0.22 1000 $0.05375 10000 $0.05375	Buy Now
Mouser Electronics	HN1B04FU-Y,LF		7,491			1 $0.15 10 $0.117 100 $0.052 1000 $0.047 10000 $0.034	Buy Now
Arrow Electronics	HN1B04FU-Y,LF		1		1	1 $0.023 10 $0.023 100 $0.023 1000 $0.023 10000 $0.023	Buy Now
TTI	HN1B04FU-Y,LF	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.0356	Buy Now
Toshiba America Electronic Components HN1B04FE-Y,LXHF AUTO AEC-Q PNP + NPN TR VCEO:-50
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1B04FE-Y,LXHF	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.14238	Buy Now
	HN1B04FE-Y,LXHF	Cut Tape	3,989		1	1 $0.71 10 $0.442 100 $0.71 1000 $0.19392 10000 $0.17544	Buy Now
Avnet Americas	HN1B04FE-Y,LXHF	Reel		36 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	HN1B04FE-Y,LXHF		7,934			1 $0.6 10 $0.397 100 $0.263 1000 $0.183 10000 $0.126	Buy Now
TTI	HN1B04FE-Y,LXHF	Reel			4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components HN1B04FE-GR,LF TRANS NPN/PNP 50V 0.15A ES6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1B04FE-GR,LF	Cut Tape	3,760		1	1 $0.24 10 $0.144 100 $0.24 1000 $0.05779 10000 $0.05127	Buy Now
	HN1B04FE-GR,LF	Digi-Reel	3,760		1	1 $0.24 10 $0.144 100 $0.24 1000 $0.05779 10000 $0.05127	Buy Now
Mouser Electronics	HN1B04FE-GR,LF		211,127			1 $0.16 10 $0.109 100 $0.056 1000 $0.045 10000 $0.031	Buy Now
Toshiba America Electronic Components HN1B04FU-Y,LXHF AUTO AEC-Q PNP + NPN TR VCEO:-50
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1B04FU-Y,LXHF	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.12037	Buy Now
	HN1B04FU-Y,LXHF	Cut Tape	2,950		1	1 $0.55 10 $0.341 100 $0.55 1000 $0.14611 10000 $0.14611	Buy Now
Avnet Americas	HN1B04FU-Y,LXHF	Reel		36 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	HN1B04FU-Y,LXHF		6,000			1 $0.46 10 $0.294 100 $0.19 1000 $0.13 10000 $0.087	Buy Now
TTI	HN1B04FU-Y,LXHF	Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components HN1B04FU-GR,LXHF AUTO AEC-Q PNP + NPN TR VCEO:-50
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1B04FU-GR,LXHF	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.12037	Buy Now
	HN1B04FU-GR,LXHF	Cut Tape	2,988		1	1 $0.55 10 $0.341 100 $0.55 1000 $0.14611 10000 $0.14611	Buy Now
Avnet Americas	HN1B04FU-GR,LXHF	Reel		36 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	HN1B04FU-GR,LXHF		4,684			1 $0.46 10 $0.294 100 $0.19 1000 $0.13 10000 $0.087	Buy Now
TTI	HN1B04FU-GR,LXHF	Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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HN1B04 Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF
HN1B04F	Toshiba	Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)	Original	PDF
HN1B04FE	Toshiba	Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)	Original	PDF
HN1B04FEGR	Toshiba	TRANS GP BJT NPN PNP 50V 50A 6(2-2N1G)	Original	PDF
HN1B04FE-GR,LF	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS NPN/PNP 50V 0.15A ES6	Original	PDF
HN1B04FE-GR(5L,F,T	Toshiba	Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN PNP/NPN -50V -0.15A ES6	Original	PDF
HN1B04FE-GR,LXHF	Toshiba America Electronic Components	AUTO AEC-Q PNP + NPN TR VCEO:-50	Original	PDF
HN1B04FE-Y,LF	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS NPN/PNP 50V 0.15A ES6	Original	PDF
HN1B04FE-Y,LXHF	Toshiba America Electronic Components	AUTO AEC-Q PNP + NPN TR VCEO:-50	Original	PDF
HN1B04FE-Y(T5L,F,T	Toshiba	Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN PNP/NPN -50V -0.15A ES6	Original	PDF
HN1B04F(TE85L,F)	Toshiba	Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN PNP/NPN -30V -0.5A SM6	Original	PDF
HN1B04FU	Toshiba	Silicon PNP Epitaxial Type (PCT Process) Transistor	Original	PDF
HN1B04FU	Toshiba	NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)	Scan	PDF
HN1B04FU-GR	Toshiba	HN1B04F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2J1A, 6 PIN, BIP General Purpose Small Signal	Original	PDF
HN1B04FU-GR,LF	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS NPN/PNP 50V 0.15A US6	Original	PDF

HN1B04FU-GR(L,F,T)	Toshiba	HN1B04FU - Trans GP BJT NPN/PNP 50V 0.15A 6-Pin US	Original	PDF
HN1B04FU-GR,LXHF	Toshiba America Electronic Components	AUTO AEC-Q PNP + NPN TR VCEO:-50	Original	PDF
HN1B04FU-Y	Toshiba	HN1B04F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2J1A, 6 PIN, BIP General Purpose Small Signal	Original	PDF
HN1B04FU-Y,LF	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - X34 PB-F US6 PLN (LF) TRANSISTOR	Original	PDF
HN1B04FU-Y,LXHF	Toshiba America Electronic Components	AUTO AEC-Q PNP + NPN TR VCEO:-50	Original	PDF
HN1B04FU-Y(T5L,F,T	Toshiba	Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN PNP/NPN -50V -0.15A US6	Original	PDF

HN1B04 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HN1B04FE Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type Ft Excellent hFE linearity Text: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400	Original	PDF	HN1B04FE 150mA -150mA HN1B04FE TOSHIBA Transistor Silicon PNP Epitaxial Type Ft Excellent hFE linearity
E22B2 Abstract: HN1B04FE Text: HN1B04FE 東芝トランジスタシリコンNPN･PNPエピタキシャル形 PCT方式 HN1B04FE ○ 低周波増幅用単位: mm Q1 z z z z 高耐圧です。 : VCEO = 50V コレクタ電流が大きい。 : IC = 150mA (最大) 電流増幅率が高い。	Original	PDF	HN1B04FE 150mA -150mA E22B2 HN1B04FE
HN1B04F Abstract: No abstract text available Text: HN1B04F 東芝トランジスタシリコンPNP･NPNエピタキシャル形 PCT方式 HN1B04F ○ 低周波小電力増幅用 ○ 励振段増幅用 ○ スイッチング用単位: mm Q1 • 直流電流増幅率の電流依存性が優れています。	Original	PDF	HN1B04F HN1B04F
Untitled Abstract: No abstract text available Text: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400	Original	PDF	HN1B04FU 150mA
HN1B04F Abstract: No abstract text available Text: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity	Original	PDF	HN1B04F -400mA 400mA HN1B04F
HN1B04FE Abstract: No abstract text available Text: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400	Original	PDF	HN1B04FE 150mA -150mA HN1B04FE
HN1B04FU Abstract: No abstract text available Text: HN1B04FU 東芝トランジスタシリコンNPN･PNPエピタキシャル形 PCT方式 HN1B04FU ○ 低周波増幅用単位: mm Q1 z z z z 高耐圧です。 : VCEO = 50V コレクタ電流が大きい。 : IC = 150mA (最大) 電流増幅率が高い。	Original	PDF	HN1B04FU 150mA -150mA 100mA, HN1B04FU
HN1B04F Abstract: No abstract text available Text: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity	Original	PDF	HN1B04F -400mA 400mA HN1B04F
HN1B04F Abstract: HN1B04 Text: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity	Original	PDF	HN1B04F -400mA 400mA HN1B04F HN1B04
HN1B04FU Abstract: No abstract text available Text: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400	Original	PDF	HN1B04FU 150mA -150mA HN1B04FU
Untitled Abstract: No abstract text available Text: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400	Original	PDF	HN1B04FE 150mA
HN1B04FE Abstract: No abstract text available Text: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400	Original	PDF	HN1B04FE 150mA -150mA HN1B04FE
Untitled Abstract: No abstract text available Text: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400	Original	PDF	HN1B04FE 150mA
HN1B04FU Abstract: No abstract text available Text: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400	Original	PDF	HN1B04FU 150mA -150mA HN1B04FU

HN1B04FU Abstract: No abstract text available Text: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400	Original	PDF	HN1B04FU 150mA -150mA HN1B04FU
HN1B04FU Abstract: No abstract text available Text: HN1B04FU 東芝トランジスタシリコンNPN･PNPエピタキシャル形 PCT方式 HN1B04FU ○ 低周波増幅用単位: mm Q1 z z z z 高耐圧です。 : VCEO = 50V コレクタ電流が大きい。 : IC = 150mA (最大) 電流増幅率が高い。	Original	PDF	HN1B04FU 150mA -150mA 100mA, HN1B04FU
HN1B04FU Abstract: No abstract text available Text: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) l High hFE : hFE = 120~400	Original	PDF	HN1B04FU 150mA -150mA HN1B04FU
85500 transistor Abstract: MZB1001T02 MICROblower piezoelectric blower MICRO blower RK73Z1JTTD GRM1882C1H101JA01D GRM1882C1H corrugated carton diagram PRESSURE cooker Text: 仕様書番号：MZB1001T02_Ver.2.0 Drawing No. P. 1/18 仕様書 Specification of Piezoelectric Microblower MZB1001T02 承認 Approved by 決定年月日 Date 確認 Checked by 担当 Issued by October 11, 2011 1. 適用 Scope 当納入仕様書は一般電子機器製品に使用する圧電マイクロブロア以下、ブロアについて規定します。	Original	PDF	MZB1001T02 MZB1001T02 85500 transistor MICROblower piezoelectric blower MICRO blower RK73Z1JTTD GRM1882C1H101JA01D GRM1882C1H corrugated carton diagram PRESSURE cooker
lm2804 Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.	Original	PDF	BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
SSM3J307T Abstract: SSM3J328R SSM3J334R Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	PDF	200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	PDF	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Untitled Abstract: No abstract text available Text: T O S H IB A TOSHIBA TRANSISTOR HN1B04FU SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) H N 1 B 4 F U Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2 . 1± 0.1 1.25 ± 0 . 1 n6 r - i4 \|L—_Lr 2 43 S9'0	OCR Scan	PDF	HN1B04FU 150mA -150m
HN1B04FU Abstract: No abstract text available Text: TOSHIBA TOSHIBA TRANSISTOR HN1B04FU SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HN1 B04FU U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2 .1± 0.1 1.25 ± 0 .1. Q l: Œ- High Voltage and High C urrent	OCR Scan	PDF	HN1B04FU N1B04FU 150mA HN1B04FU
MARKING e1v Abstract: No abstract text available Text: TOSHIBA HN1B04FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) H N 1 R fl ZI F II Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2. 1± 0.1 1.2 5 ± 0.1 Ql: High Voltage and High C urrent	OCR Scan	PDF	HN1B04FU 150mA MARKING e1v

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HN1B04 Price and Stock

Toshiba America Electronic Components HN1B04FU-Y,LF

Toshiba America Electronic Components HN1B04FE-Y,LXHF

Toshiba America Electronic Components HN1B04FE-GR,LF

Toshiba America Electronic Components HN1B04FU-Y,LXHF

Toshiba America Electronic Components HN1B04FU-GR,LXHF

HN1B04 Datasheets (20)

HN1B04 Datasheets Context Search

HN1B04FE

E22B2

HN1B04F

Untitled

HN1B04F

HN1B04FE

HN1B04FU

HN1B04F

HN1B04F

HN1B04FU

Untitled

HN1B04FE

Untitled

HN1B04FU

HN1B04FU

HN1B04FU

HN1B04FU

85500 transistor

lm2804

SSM3J307T

alternator diode 1776 B

Untitled

HN1B04FU

MARKING e1v