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    HY57V654010

    Abstract: RA12 875mil
    Text: HY57V654010 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654010 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654010 is organized as 2banks of


    Original     		PDF HY57V654010 HY57V654010 864-bit 608x4. 1SE15-10-SEP97. RA12 875mil

    96ns

    Abstract: No abstract text available
    Text: HY57V654010A 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654010A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654010A is organized as 2banks of


    Original     		PDF HY57V654010A HY57V654010A 864-bit 608x4. 1SE34-11-MAR98. 400mil 54pin 96ns

    BYTE18

    Abstract: BYTE65 HYM7V75AS1601ATNG
    Text: 16Mx72 bit SDRAM “Intel” Registered DIMM N-Series with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V75AS1600A/ HYM7V75AS1601A/ HYM7V75AS1630A/ HYM7V75AS1631A DESCRIPTION The HYM7V75AS1600A/ 75AS1601A/ 75AS1630A/ 75AS1631A N-Series are high speed 3.3-Volt


    Original     		PDF 16Mx72 PC/100 16Mx4 HYM7V75AS1600A/ HYM7V75AS1601A/ HYM7V75AS1630A/ HYM7V75AS1631A 75AS1601A/ 75AS1630A/ BYTE18 BYTE65 HYM7V75AS1601ATNG

    Untitled

    Abstract: No abstract text available
    Text: -H Y U N D A I - • H Y 57V 054O1OA 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V654010A is a 67,108,864-bit C M O S Synchronous D RA M , ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654010A is organized a s 2banks of


    OCR Scan     		PDF 57V654010A 864-bit HY57V654010A 608x4. HY57V65401 400mil 54pin 2J27I8J7K 150fg 1SE34-

    Untitled

    Abstract: No abstract text available
    Text: u V I I u n It • • ‘M T U N D A 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 I PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL


    OCR Scan     		PDF 16Mx4 HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 HY57V644010

    Untitled

    Abstract: No abstract text available
    Text: u i r i l ai n • i " H Y U N D A I 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL


    OCR Scan     		PDF HY57V644010 HY57V644020 HY57V654010 HY57V654020 HY57V644011 HY57V644021 HY57V654011 HY57V654021 16Mx4 HY57V644010/

    Untitled

    Abstract: No abstract text available
    Text: "H Y U N D A I - • HY57V654010 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V654010 is a 6 7 ,1 0 8 ,864-bit C M O S Synchronous D RA M ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. H Y 57V654010 is organized as 2banks of


    OCR Scan     		PDF HY57V654010 57V654010 864-bit 608x4.

    hy57v168010a

    Abstract: Y57V164010A hy57v161610a Y57V HY57V641620 HY57V641621
    Text: «HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS In d e x . 2. PRODUCT QUICK REFERENCE GUIDE SD R A M Part N u m b ering.


    OCR Scan     		PDF 16M-bit 1Mx16-bit Y57V164010A HY57V168010A HY57V161610A 7V651610 HY57V651620 HY57V644021 HY57V654021 HY57V648021 Y57V HY57V641620 HY57V641621

    hy57v168010b

    Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
    Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x


    OCR Scan     		PDF 256Kx16 HY57V41610TC 400mil 16Mbit 1Mx16 HY57V16401 HY57V168010BTC HY57V161610BTC 44pin) hy57v168010b ddr sdram 128Mbit 8Mx16 54-PIN

    hy57v168010a

    Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801
    Text: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part


    OCR Scan     		PDF 16M-bit HY57V16401OATC HY57V164010ALTC HY57V16801 HY57V168010ALTC HY57V161610ATC HY57V161610ALTC 64M-bit HY57V644010TC HY57V644020TC hy57v168010a HY57V164010 TSOPII

    HY57V168

    Abstract: hy57v168010b hym7v64200 hy57v168010a HYM7V64400 HYM7V64400TFG PC100 HYM7V65400 HYM7V64200TFG pc66
    Text: •HYUN DAI Sync. DRAM MODULE - 1 TYPE 168Pin DIMM SIZE 8MB DESCRIPTION 1M X 64 Sync. Unbuffered 16MB 2M X 64 Sync. X HYM7V64200BTRG HYM7V64200TFG HYM7V64200BTFG HYM7V65200CLTFG 72 Sync., ECC HYM7V72A2Q0TFG HYM7V72A200BTFG HYM7V75A2Ö0CLTFG 64 Sync. HYM7V64400TKG


    OCR Scan     		PDF 168Pin HYM7V641OOTRG HYM7V64100BTRG HYM7V6420 8/10P/10S 8/10P/t0S HYM7V64200BTRG HYM7V64200TFG HYM7V64200BTFG HYM7V65200CLTFG HY57V168 hy57v168010b hym7v64200 hy57v168010a HYM7V64400 HYM7V64400TFG PC100 HYM7V65400 pc66

    HYM7V75AS1601

    Abstract: No abstract text available
    Text: - H Y U N D A I ^16MX72 BIT SDRAM “INTEL” REGISTERED DIMM N-SERIES with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8K Refresh HYM7V75AS1600A/ HYM7V75AS1601 A/ HYM7V75AS1630A/ HYM7V75AS1631A PRELIMINARY DESCRIPTION


    OCR Scan     		PDF 16MX72 PC/100 16Mx4 HYM7V75AS1600A/ HYM7V75AS1601 HYM7V75AS1630A/ HYM7V75AS1631A 75AS1601A/ 75AS1630A/

    HY57V16161

    Abstract: hy57v168010b 1MX16BIT 4MX16
    Text: •’HYUNDAI - • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE S D R A M Fart Numbering Ordering Information 3. DRAM DATA SHEETS 4M-bit S D R A M Page HY57V41610TC- 256Kx16-bit, 1K Ref. 2Bank, 3.3V-• Timing Diagram


    OCR Scan     		PDF HY57V41610TC--------------------- 256Kx16-bit, 16M-bit HY57V16401O --------HY57V168010BTC------------------- -------------------------------HY57V16161 -------------------1Mx16-bit, 64M-bit HY5DV654023TC-------------------- HY57V16161 hy57v168010b 1MX16BIT 4MX16

    HY57V161610TC

    Abstract: No abstract text available
    Text: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC


    OCR Scan     		PDF 16Mbit HY57V164010TC HY57V168010TC HY57V161610TC HY57V644010TC HY57V644020TC HY57V654010TC HY57V654020TC Y57V64401IT HY57V644/125/100 HY57V161610TC