microwave mosfet
Abstract: Cree Microwave UGF27025 UGF27025F
Text: UGF27025 25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 2.5 to 2.7 GHz. Rated with a minimum output power of 25W, it is ideal for CW and Multi-Tone Amplifiers in Class AB operation.
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UGF27025
28VDC,
2500MHz,
UGF27025F
UGF27025
microwave mosfet
Cree Microwave
UGF27025F
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XDS510
Abstract: XDS510PP XDS510WS SMG510W TMS470 manual
Text: TMS470R1x Emulator Software Getting Started Guide 1996 Microcontroller Products Printed in U.S.A., October 1996 M414009–9741A SPNU123B Book Type Two Lines Volume # Book Type Volume # Book Type Two Lines Title Two Lines Subtitle Line Two year Title Two Lines
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TMS470R1x
M414009
SPNU123B
XDS510
XDS510PP
XDS510WS
SMG510W
TMS470 manual
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Untitled
Abstract: No abstract text available
Text: UGF16085 85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed specially for satellite communication applications in frequency range from 1626 to 1661 MHz. Rated with a minimum output power of 85W. This device is ideal for 16QAM, TDMA,
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UGF16085
661GHz,
16QAM,
UGF16085
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diode t25 4 j6
Abstract: PFM19030 PFM19030F PFM19030SM outline of the heat sink for Theta JC grm39 F219 SM4W103-ND diode t25 4 c6
Text: PFM19030 SPECIFICATION 1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs This versatile PCS module provides excellent linearity and efficiency in a low-cost surface mount package. The PFM19030 includes two stages of Package Type: Surface Mount
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PFM19030
PFM19030SM
diode t25 4 j6
PFM19030F
PFM19030SM
outline of the heat sink for Theta JC
grm39
F219
SM4W103-ND
diode t25 4 c6
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MRF19030
Abstract: UPF18030-095
Text: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for DCS base station applications in the frequency band 1.805 GHz to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM,
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UPF18030-095
MRF19030
UPF18030-095
MRF19030
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cree rf
Abstract: UPF14060 UPF14060F UPF14060P
Text: UPF14060 60W, 1.4 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in
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UPF14060
UPF14060F
cree rf
UPF14060
UPF14060F
UPF14060P
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127324
Abstract: CRF-24010 CRF-24010-001 CRF-24010-101 2400G
Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage
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CRF-24010-001
CRF-24010-101
CRF-24010
127324
CRF-24010-001
CRF-24010-101
2400G
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simple fm transmitter mini project report for engineering students
Abstract: TMS320C40 VHDL code for Winograd DFT algorithm TMS 57002 8 bit alu in vhdl mini project report RF transmitter and Receiver circuit for robot con SPRA017 mini project of fsk generator using ic 555 schematic diagram vga to rca DVD LASER POINTER REPAIRING
Text: TMS320 DSP Development Support Reference Guide 1997 Digital Signal Processing Solutions Printed in U.S.A., January 1997 SPRU011E Reference Guide TMS320 DSP Development Support 1997 TMS320 DSP Development Support Reference Guide Literature Number: SPRU011E
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TMS320
SPRU011E
simple fm transmitter mini project report for engineering students
TMS320C40
VHDL code for Winograd DFT algorithm
TMS 57002
8 bit alu in vhdl mini project report
RF transmitter and Receiver circuit for robot con
SPRA017
mini project of fsk generator using ic 555
schematic diagram vga to rca
DVD LASER POINTER REPAIRING
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Untitled
Abstract: No abstract text available
Text: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB
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UGF19125
1955MHz,
1965MHz
f1-10MHz
10MHz)
-43dBc
1300mA
UGF19125
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127324
Abstract: No abstract text available
Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation
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CRF-24010-001
CRF-24010-101
CRF-24010
127324
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PFM21030 SPECIFICATION 2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs This versatile UMTS module provides excellent linearity and efficiency in Package Type: Surface Mount a low-cost surface mount package. The PFM21030 includes two stages
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PFM21030
PFM21030SM
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Cree Microwave
Abstract: CRF-24010 CRF-24010-001 CRF-24010-101
Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage
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CRF-24010-001
CRF-24010-101
CRF-24010
Cree Microwave
CRF-24010-001
CRF-24010-101
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PDF
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PN channel MOSFET 10A
Abstract: Cree Microwave UGF21125
Text: UGF21125 125W, 2.17GHz, 28V, Broadband RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for W-CDMA, TDMA, CDMA, GSM single and Multi-Carrier power amplifiers in
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UGF21125
17GHz,
2135MHz,
2145MHz
f1-10MHz
10MHz)
UGF21125
PN channel MOSFET 10A
Cree Microwave
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Cree Microwave
Abstract: UGF21060 UGF21060F UGF21060P
Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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UGF21060
17GHz,
MRF21060/MRF21060S.
UGF21060
Cree Microwave
UGF21060F
UGF21060P
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MRF9180
Abstract: UGF09180F Cree Microwave UGF09180
Text: UGF09180 180W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 180W, it is ideal for CDMA, TDMA, GSM,
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UGF09180
869-894MHz,
869-894MHz.
MRF9180.
28VDC,
869MHz,
UGF09180
MRF9180
UGF09180F
Cree Microwave
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PDF
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127324
Abstract: CRF-24010-101 42676 Cree Microwave 121-985 br 354 428 Ts 537 744 231 091 CRF-24010 CRF-24010-001
Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation
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CRF-24010-001
CRF-24010-101
CRF-24010
127324
CRF-24010-101
42676
Cree Microwave
121-985
br 354 428
Ts 537
744 231 091
CRF-24010-001
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UGF09030P
Abstract: UGF09030F 110MIL
Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier
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UGF09030
800MHz
1000MHz.
MRF9030
26VDC,
945MHz,
UGF09030F
400mA
940MHz
IS-97
UGF09030P
UGF09030F
110MIL
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Untitled
Abstract: No abstract text available
Text: UGF09060 60W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM,
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UGF09060
869-894MHz,
869-894MHz.
MRF9060.
27VDC,
869MHz,
UGF09060
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PDF
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shery
Abstract: No abstract text available
Text: UTV0408-45 45W Psync, 470-860MHz, 32V Broadband RF Power N Channel Enhancement-Mode Lateral MOSFET The UTV0408-45 is designed for high power UHF TV transmitter applications and is capable of producing 14dB gain and 45 watt peak sync output power over an instantaneous bandwidth
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UTV0408-45
470-860MHz,
UTV0408-45
860MHz.
30dBc
55dBc
UTV0408-45F
shery
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PDF
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ATC130
Abstract: zener diode 1206
Text: UGF09045 45W, 930-960MHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 930-960MHz. Rated with a minimum output power of 45W, it is ideal for CDMA, TDMA, GSM,
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UGF09045
930-960MHz,
930-960MHz.
MRF9045.
28VDC,
930MHz,
UGF09045ended,
UGF09045
ATC130
zener diode 1206
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F1840
Abstract: Cree Microwave cree rf UPF2012 UPF2012-178 UPF2012F UPF2012P package type 440109
Text: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.
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UPF2012
30dBc
UPF2012F
UPF2012P
UPF2012
F1840
Cree Microwave
cree rf
UPF2012-178
UPF2012F
UPF2012P
package type 440109
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cree rf
Abstract: UGF2016 UGF2016F cree MOS F1840
Text: UGF2016 16W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 16W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.
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UGF2016
30dBc
UGF2016
cree rf
UGF2016F
cree MOS
F1840
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Untitled
Abstract: No abstract text available
Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier
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UGF09030
800MHz
1000MHz.
870MHz
MRF9030
CDMA2000:
UGF9030F
UGF09030
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PDF
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U01050
Abstract: No abstract text available
Text: Dim en si on s: - chennatic: 0 ,0 1 8 + 0 .0 0 2 :2.42CT 0 .2 5 0 0 .1 0 0 TYP o MAX Pri 3 2 XD03561 _ 2S • o m K o Se c -O 5 cn -<3 4 3 o- o o 0 .0 1 5 0 .0 0 5 YYWW T 6 in 0 ,2 8 5 MAX XFMRS -o f 4 0 .2 0 0 3. 0 .3 3 0 Max c Electrica ISOLATION: 0.100
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OCR Scan
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1500VAC
100KHz
100mV
U01050
XF03501
U01050
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